Semiconductor Island Array for Infrared to Visible Light Conversion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing frequency/wavelength conversion devices for non-ionising electromagnetic radiation, such as night vision and thermal imaging devices, face limitations in performance and bulkiness, particularly in converting infrared radiation to visible light efficiently.
Innovation Solution
A frequency conversion device comprising an array of mutually spaced semiconductor islands made of III-V semiconductor compounds, supported by a transparent substrate, which undergoes sum frequency or difference frequency generation processes to emit visible light when irradiated with a pump beam and infrared radiation, allowing for efficient conversion while maintaining transparency to visible light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional frequency conversion devices are used to convert infrared radiation to visible light, then conversion capability is achieved, but device bulkiness increases and performance is limited
Solution Approach 1:
The device divides the frequency conversion function into discrete semiconductor islands distributed across a transparent substrate, rather than using a single bulk converter. This segmentation enables high conversion efficiency through collective nonlinear optical response while maintaining device transparency and reducing effective conversion volume
Solution Approach 2:
The device combines III-V semiconductor materials with distinct nonlinear optical properties with a transparent substrate material, creating a composite structure that achieves both efficient infrared-to-visible conversion and optical transparency in the visible range, resolving the contradiction between conversion performance and device bulkiness
2Productivity
If frequency conversion materials are used to convert infrared to visible light, then conversion performance improves, but visibility through the device is blocked
Solution Approach 1:
The semiconductor islands are sparsely distributed across the transparent substrate rather than forming a continuous layer, creating local conversion zones that maintain overall device transparency. This local quality approach allows infrared conversion at specific points while preserving visible light transmission through the spaces between islands
Solution Approach 2:
The array of semiconductor islands creates an effectively porous structure with high transparency in the visible range while maintaining sufficient material density for efficient nonlinear optical conversion of infrared radiation, resolving the contradiction between conversion efficiency and visible light transmission
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high efficiency in converting infrared radiation to visible light, enabling effective thermal imaging and night vision applications with improved performance and reduced bulkiness, while allowing for vision through the device due to its transparency.
Implementation Method 1
electromagnetic radiation of a first wavelength incident upon the semiconductor islands and electromagnetic radiation of a second wavelength incident upon the semiconductor islands cause the semiconductor islands to emit electromagnetic radiation of a third wavelength different to the first and second wavelengths by at least one of a sum frequency generation process and a difference frequency generation process
Implementation Method 2
electromagnetic radiation of a first wavelength incident upon the semiconductor islands and electromagnetic radiation of a second wavelength incident upon the semiconductor islands cause the semiconductor islands to emit electromagnetic radiation of a third wavelength different to the first and second wavelengths by at least one of a sum frequency generation process and a difference frequency generation process
Implementation Method 3
the semiconductor islands are supported by a transparent support such that the support is transparent to radiation of the third wavelength, wherein at least the radiation of the third wavelength passes through the transparent support
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
A frequency conversion device, including a source of a pump beam of electromagnetic radiation of a first wavelength, and an array of mutually spaced semiconductor islands composed of at least one III-V semiconductor compound and configured so that the pump beam of electromagnetic radiation of the first wavelength incident upon the semiconductor islands and electromagnetic radiation of a second wavelength incident upon the semiconductor islands cause the semiconductor islands to emit electromagnetic radiation of a third wavelength different to the first and second wavelengths by at least one of a sum frequency generation process and a difference frequency generation process; wherein the semiconductor islands are supported by a transparent support such that the support is substantially transparent to radiation of the third wavelength, wherein at least the radiation of the third wavelength passes through the transparent support.