Semiconductor Island Region Saturation Current Control
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Solution Overview
Problem
In semiconductor devices with a trench gate portion forming an island region, the increased saturation current due to electron channel formation between emitter regions leads to current concentration at corners, necessitating measures to suppress this increase.
Innovation Solution
The semiconductor device design includes a trench gate portion with distinct side surfaces, where the second conductivity type contact region is positioned between the first and second contact regions, preventing channel formation between them, thereby controlling electron injection and reducing saturation current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If a trench gate portion forms an island region in a semiconductor layer, then the device structure is formed, but saturation current increases due to channel formation between emitter regions
Solution Approach 1:
The patent introduces a second conductivity type contact region that segments the island region into separate contact areas. This segmentation prevents the formation of a continuous channel between emitter regions, thereby suppressing saturation current while maintaining the island region structure.
Solution Approach 2:
The second conductivity type contact region acts as an intermediary element between the first conductivity type contact regions. By being in contact with the trench gate portion at a position between the first and second contact regions, it prevents direct channel formation between emitter regions, thus reducing saturation current.
2Shape
If emitter regions are distributedly disposed in the island region and contact different side surfaces of the trench gate portion, then the device structure is formed, but current concentration occurs at corners causing increased saturation current
Solution Approach 1:
The patent extracts or removes the harmful effect of current concentration by introducing the second conductivity type contact region. This contact region interrupts the channel formation at corner areas, preventing current concentration while preserving the distributed emitter region structure.
3Ease of operation
If a channel of electrons is formed at the interface between the trench gate portion and body region, then the device operates, but electron injection from emitter regions increases saturation current
Solution Approach 1:
The second conductivity type contact region serves as an intermediary that blocks the channel formation between emitter regions. By contacting the trench gate portion between the first contact regions, it prevents electron injection while allowing necessary channel operation in other areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively suppresses the increase in saturation current by preventing channel formation between emitter regions, reducing electron injection and on-resistance, and preventing current concentration at corners of the island region.
Implementation Method 1
When an on-voltage is applied to a trench gate portion, a channel of electrons is formed at an interface between the trench gate portion and a body region
Implementation Method 2
the second conductivity type contact region is in contact with the trench gate portion at a position between the first contact region and the second contact region... no channel is formed at a portion with which the second conductivity type contact region is in contact
Data Source
AI summary
A semiconductor device includes a semiconductor layer and a trench gate portion that extends toward a deep portion from a front surface of the semiconductor layer. The semiconductor layer includes an island region surrounded by the trench gate portion. A first side surface of the trench gate portion and a second side surface of the trench gate portion are in contact with the island region. A first conductivity type contact region that includes a first contact region that is in contact with the first side surface and a second contact region that is in contact with the second side surface is provided in the island region. Moreover, a second conductivity type contact region that is in contact with the trench gate portion at a position between the first contact region and the second contact region is provided in the island region.