Semiconductor Island Stress Mitigation via Segmented Oxide Dielectrics
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Solution Overview
Problem
The miniaturization of semiconductor structures leads to stress-induced collapse of island structures due to insulating material deposition, compromising device reliability and performance.
Innovation Solution
A method involving the formation of semiconductor oxide layers in narrower trenches followed by the deposition of a second dielectric layer in wider trenches, reducing stress on island structures and preventing collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If insulating materials are deposited to fill trenches for forming isolation structures, then electrical isolation between island structures is achieved, but stress from the insulating material causes island structures to collapse
Solution Approach 1:
The patent divides the isolation structure into multiple segments: a first isolation structure formed in first trenches and a second isolation structure formed in second trenches. This segmentation allows different materials and stress characteristics to be applied in different regions, preventing uniform stress-induced collapse while achieving electrical isolation.
Solution Approach 2:
The patent applies different materials with different stress characteristics to different locations. The first isolation structure uses a first insulating material, while the second isolation structure uses a second insulating material. This local differentiation of material properties allows stress management in specific regions where island structures are most vulnerable.
2Productivity
If semiconductor structure size is reduced for miniaturization, then device integration is improved, but stress-induced collapse of island structures occurs more frequently
Solution Approach 1:
By dividing the isolation structures into first and second isolation structures formed at different stages, the patent enables progressive stress management that supports miniaturized island structures without causing collapse, thus maintaining reliability during high-density integration.
Solution Approach 2:
The first isolation structures are formed preliminarily before the second isolation structures. This preliminary action establishes a initial stress-managed environment that protects miniaturized island structures during subsequent processing steps, preventing collapse as integration density increases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach mitigates the collapse of island structures and enhances the reliability and performance of semiconductor devices by distributing stress more evenly across the structure.
Implementation Method 1
An oxidation is performed to convert the semiconductor layer to a semiconductor oxide layer in each of the first trenches and each of the second trenches
Data Source
AI summary
The present disclosure provides a method for preparing semiconductor structures. The method includes the following steps. A substrate is provided. A plurality of first trenches, a plurality of second trenches, a plurality of first island structures and a plurality of second island structures are formed. Each of the first island structures is separated from each of the second island structures by the first trenches. The plurality of first island structures are separated from each other by the second trenches, and the plurality of second island structures are separated from each other by the second trenches. A first dielectric layer is then conformally formed to cover sidewalls and a bottom of each first trench and sidewalls and a bottom of each second trench. A semiconductor layer is formed on the first dielectric layer. An oxidation is performed to convert the semiconductor layer into a semiconductor oxide layer in each of the first trenches and each of the second trenches. A second dielectric layer is then formed to fill the plurality of second trenches.