Semiconductor Structure With Isolated Active Areas
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Solution Overview
Problem
The miniaturization of semiconductor components in DRAM manufacturing increases manufacturing difficulty due to smaller critical dimensions, particularly for peripheral control devices.
Innovation Solution
A semiconductor structure is designed with a substrate featuring isolated active areas and a gate structure that connects doped regions across these areas, improving device integration and electrical properties by controlling the states of multiple active areas with a single gate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the critical dimension is reduced to increase device integration, then the device density is improved, but the manufacturing difficulty increases
Solution Approach 1:
The active area is divided into multiple isolated active areas (first active area, second active area, etc.) by isolation structures. Each isolated active area contains specific doped regions that can be independently controlled. This segmentation allows the peripheral control device to manage multiple memory cells through separate control paths, reducing the impact of dimensional reduction on manufacturing while maintaining high device integration.
2Device complexity
If a single gate structure controls multiple active areas, then the device complexity is reduced, but the control precision may be compromised
Solution Approach 1:
Different doped regions (first doped region, second doped region, third doped region, fourth doped region) are formed in different isolated active areas with specific doping types and concentrations. Each doped region can be independently engineered to optimize the electrical characteristics for its specific function. This local quality approach allows a single gate structure to control multiple active areas while maintaining precise control over each area's electrical properties through tailored doping profiles.
Data Source
AI summary
A semiconductor structure and a method for preparing a semiconductor structure are provided. The semiconductor structure includes a substrate. A first active area, a second active area and an isolation structure are arranged on the substrate. The first active area and the second active area are isolated from one another by the isolation structure. The first active area includes a first doped region and a second doped region. The second active area includes a third doped region and a fourth doped region. The semiconductor structure further includes a gate structure. The gate structure is arranged above the second doped region and the third doped region, and the gate structure is connected to the second doped region and the third doped region.