Semiconductor Isolation Structure for Mutual Coupling Reduction

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Mutual coupling between input and output bondwires in semiconductor devices at higher frequencies leads to decreased gain, making it challenging to maintain high power efficiency and linearity in power amplifiers.

Innovation Solution

Incorporating an isolation structure, such as a bondwire, interposed between the input and output pads of a transistor die, connected to a common return path, to reduce electromagnetic interaction and enhance signal isolation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If bondwire arrays are used to establish signal paths at higher frequencies, then signal transmission is achieved, but mutual coupling occurs between input and output bondwires causing decreased gain

Engineering Contradiction:
Improvesignal transmission qualityVSAvoidmutual coupling between bondwires
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

An isolation structure is introduced as an intermediary element positioned between the input and output bondwire arrays. This isolation structure acts as a mediator that blocks or reduces the electromagnetic interaction between the input and output bondwires, thereby eliminating the harmful mutual coupling effect while allowing both signal paths to function independently

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The harmful electromagnetic interaction field between the bondwire arrays is extracted or removed from the system by introducing the isolation structure. The isolation structure effectively extracts the mutual coupling effect from the vicinity of the bondwires, preventing it from affecting signal transmission quality

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If isolation structure is added to reduce mutual coupling, then gain is improved, but device complexity increases

Engineering Contradiction:
ImprovegainVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The isolation structure is implemented as a thin film or shell-like structure that can be deposited or formed between the bondwire arrays. This flexible implementation approach provides effective electromagnetic isolation without requiring bulky or complex three-dimensional structures, thereby minimizing the increase in device complexity while achieving the desired gain improvement

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The isolation structure effectively improves gain without compromising other performance characteristics, particularly at higher frequencies, by minimizing mutual coupling between input and output interconnects.

Implementation Method 1

an isolation structure interposed between the input and output pads of the transistor die, the isolation structure extending above the top die surface of the transistor die, the isolation structure being coupled to the conductive structure, and the isolation structure being connected to a common return path of the transistor die

Methodology Applied
Scientific EffectElectromagnetic shielding: Faraday Cage

Data Source

PatentUS20210287983A1Semiconductor device with isolation structure
Publication Date: 2021.09.16 NXP USA INC
  • US20210287983A1 patent drawing
  • US20210287983A1 patent drawing
  • US20210287983A1 patent drawing

AI summary

A semiconductor device includes a transistor die having top and bottom die surfaces, an electrically conductive structure, and input and output pads formed at the top die surface. An isolation structure is interposed between the input and output pads of the transistor die. The isolation structure extends above the top die surface, is coupled to the conductive structure, and is connected to a common return path of the transistor die. The isolation structure may be formed from one or more bondwires and is configured to reduce mutual coupling between input and output interconnects of the semiconductor device.