Semiconductor Device Isolation Patterns Prevent Bridge Failures
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Solution Overview
Problem
As semiconductor devices, such as MRAM, undergo increased integration, the patterning process for miniaturized configuration elements can lead to bridge failures and electrical shorts due to high-density arrangement, which existing technologies struggle to prevent effectively.
Innovation Solution
The semiconductor device design includes isolating gate patterns, cell transistors, and interconnection structures with specific configurations and materials to reduce electrical shorts, featuring line-shaped elements and insulating patterns that are precisely stacked and positioned to prevent bridge failures, along with a method of forming these structures using trench isolation and deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If configuration elements are miniaturized and arranged in high density, then integration degree increases, but bridge failure and electrical shorts occur between configuration elements
Solution Approach 1:
The configuration elements are divided into first and second cell transistors that share a common source region, creating segmented structures that reduce electrical interference and bridge failures between adjacent elements while maintaining high integration density
Solution Approach 2:
Isolation patterns are introduced as intermediary structures between the first and second isolating gate patterns, acting as mediators to prevent electrical shorts and bridge failures between adjacent configuration elements while allowing them to remain in close proximity for high integration
2Productivity
If configuration elements are miniaturized and arranged in high density, then integration degree increases, but electrical shorts occur between configuration elements
Solution Approach 1:
The configuration elements are segmented into first and second cell transistors with shared source regions, creating electrically isolated units that prevent shorts between adjacent elements while maintaining compact arrangement for high integration
Solution Approach 2:
Isolation patterns serve as intermediary insulating structures positioned between adjacent configuration elements, blocking electrical shorts while allowing the elements to be arranged in high density for improved integration
Data Source
AI summary
A semiconductor device includes an active region defining an isolation region. First and second cell interconnection structures are on the active region and the isolation region, and have line shapes that are parallel to each other. An isolation pattern is on the active region and the isolation region. The isolation pattern is between the first and second cell interconnection structures. Contact structures are between the first and second cell interconnection structures. The contact structures are at both sides of the isolation pattern and overlap the active region. Insulating patterns are between the first and second cell interconnection structures. The insulating patterns are at both sides of the isolation pattern and overlap the isolation region. Common source regions are under the first and second cell interconnection structures. The common source regions are in the active region. An isolating gate pattern that has a line shape is under the isolation pattern.