Semiconductor Isolation Structure for Void-Free Channel Protection
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Solution Overview
Problem
Existing semiconductor devices face challenges with isolation structures that can have voids or seams, leading to defects such as separation and diffusion of oxygen or carbon into channel patterns, causing adverse effects.
Innovation Solution
A semiconductor device with an isolation structure that includes insulating patterns stacked in a specific direction, an interfacial layer between these patterns, and an insulating liner surrounding them, which prevents voids, seams, and diffusion of impurities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional isolation structure is used, then the manufacturing process is simple, but voids or seams form in the isolation structure causing separation defects
Solution Approach 1:
The isolation structure is divided into multiple stacked insulating patterns (first insulating pattern, second insulating pattern, third insulating pattern) with an interfacial layer between them. This segmentation allows each layer to be formed and controlled independently, preventing voids and seams while maintaining overall structural integrity.
Solution Approach 2:
The insulating patterns are stacked in a nested configuration where each insulating pattern contains or is adjacent to others in the vertical direction. The interfacial layer is nested between the insulating patterns, creating a compact multi-layer structure that eliminates voids while maintaining simplicity in the overall isolation function.
2Reliability
If a conventional isolation structure is used, then the manufacturing process is simple, but oxygen or carbon diffuses from the isolation structure to the channel pattern causing adverse effects
Solution Approach 1:
The interfacial layer acts as an intermediary barrier between the stacked insulating patterns. This intermediate layer prevents oxygen or carbon from diffusing from the isolation structure into the channel pattern, while the insulating liner provides an additional protective barrier, thus protecting channel pattern purity without requiring complex material compositions.
Solution Approach 2:
The isolation structure uses a composite configuration of multiple insulating patterns made from different materials (e.g., silicon nitride, silicon oxide) stacked together with an interfacial layer and insulating liner. This composite structure provides enhanced barrier properties against oxygen and carbon diffusion while maintaining manufacturing feasibility.
3Reliability
If the isolation structure extends deeply into the active pattern, then isolation effectiveness is improved, but the risk of separation and defect formation increases
Solution Approach 1:
The deep isolation structure is segmented into multiple stacked insulating patterns rather than forming a single monolithic layer. This segmentation allows each layer to be formed with controlled thickness and uniformity, reducing the risk of separation even when the overall isolation structure extends deeply into the active pattern.
Solution Approach 2:
The interfacial layer is formed preliminarily between the insulating patterns before final isolation structure completion. This preliminary action ensures proper adhesion and stress distribution between layers, preventing separation defects even when the isolation structure extends deeply into the active pattern where stress concentrations may occur.
Data Source
AI summary
A semiconductor device including an active pattern located on a substrate, spaced apart from other active patterns in a first direction and extending in a second direction different from the first direction; source/drain patterns located on the active pattern and each source drain pattern spaced apart from one another in the second direction; a channel pattern located between adjacent source/drain patterns; a gate pattern extending between the adjacent source/drain patterns in the first direction and surrounding at least a portion of the channel pattern; and an isolation structure extending in the first direction, the isolation structure located outside the source/drain pattern in the second direction and extending into the active pattern in a third direction different from the first and second directions, in which the isolation structure includes insulating patterns stacked in the third direction, an interfacial layer located between insulating patterns, and an insulating liner surrounding the insulating patterns.