Insulated Gate Semiconductor Device Isolation Region
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Solution Overview
Problem
Conventional insulated gate semiconductor devices face issues with reduced on-resistance and uneven current distribution in the sensing transistors, leading to inaccurate current detection and control in main transistors due to the large proportion of uneven current regions compared to even regions.
Innovation Solution
The implementation of an isolation region surrounding the sensing transistors, which are fewer in number and smaller in area, to prevent horizontal current spread and maintain even current distribution, thereby ensuring the on-resistance corresponds to the designed value and accurate current detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If sensing transistors are integrated with main transistors in one chip for current detection, then current detection capability is improved, but current distribution becomes uneven and detection accuracy deteriorates
Solution Approach 1:
The patent divides the semiconductor device into distinct regions: a main transistor region and a sensing transistor region. The sensing transistor region is further segmented and surrounded by isolation regions that separate it from the main transistor region. This segmentation prevents current spread between regions, ensuring that current flows through dedicated paths in each region, thereby maintaining uniform current distribution while enabling accurate current detection.
2Productivity
If sensing transistors are made smaller in area to reduce impact on main operations, then main operation performance is improved, but current detection signal strength is reduced
Solution Approach 1:
The patent applies local quality by creating a dedicated sensing transistor region with specific structural characteristics. The sensing transistors are configured with appropriate sizing and surrounded by isolation regions that provide a controlled electrical environment. This local structural optimization ensures that the sensing transistors can detect current accurately without interfering with the main transistor operations, achieving both main operation efficiency and detection precision.
3Reliability
If isolation regions are added around sensing transistors to prevent current spread, then current distribution uniformity is improved, but device complexity increases
Solution Approach 1:
The patent extracts the sensing transistor region from the main transistor region by surrounding it with isolation regions. This extraction creates a distinct, isolated sensing area that can be designed and optimized independently. The isolation regions act as barriers that prevent current spread, ensuring uniform current distribution in the sensing region without requiring complex modifications to the main transistor structure, thus managing device complexity while improving reliability.
Data Source
AI summary
An isolation region is provided around a sense part. The isolation region is provided to have a depth that suppresses spread of a region with an uneven current distribution, which occurs at a peripheral edge of the sense part. Thus, in the sense part, an influence of the region with the uneven current distribution can be suppressed. Since the current distribution can be set more even throughout the sense part, the on-resistance in the sense part can be set closer to its designed value. Thus, a current ratio corresponding to a cell ratio can be obtained as designed. Consequently, current detection accuracy is improved.