Semiconductor Isolation Patterns With Different Heights in One E-Beam Step
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Solution Overview
Problem
The complexity of manufacturing and integration in semiconductor devices leads to inefficiencies, necessitating improved methods for creating semiconductor device structures with isolation patterns of varying heights.
Innovation Solution
A method involving the formation of a target layer and an energy-sensitive layer over a semiconductor substrate, where electron-beam writing processes create treated portions of different heights, which are then transferred into the target layer and substrate to form openings for isolation structures, allowing for reduced fabrication costs and increased design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional manufacturing methods are used for semiconductor devices, then device functionality is achieved, but manufacturing complexity and integration difficulty increase
Solution Approach 1:
The patent combines multiple patterning steps into a single electron-beam writing process that simultaneously creates different isolation pattern heights. By using different writing conditions (energy, dose) in one process step, the method merges what would traditionally require separate fabrication steps, thereby reducing manufacturing complexity while achieving the desired device functionality
Solution Approach 2:
The electron-beam writing process is made multi-functional by enabling it to create different isolation pattern heights through varying writing conditions. This single process serves multiple purposes: patterning, depth control, and differentiation of isolation structures, eliminating the need for multiple specialized processes and reducing overall manufacturing complexity
2Adaptability or versatility
If multiple patterning processes are used to create isolation patterns of different heights, then design flexibility is improved, but fabrication time and costs increase
Solution Approach 1:
The patent merges multiple patterning operations into a single electron-beam writing step. By adjusting writing conditions (energy levels, electron dose) during one process run, different isolation pattern heights are achieved simultaneously, eliminating the need for sequential patterning steps and thereby improving fabrication efficiency without sacrificing design flexibility
Solution Approach 2:
The invention utilizes parameter changes in the electron-beam writing process (energy, dose, writing speed) to control the depth and height of isolation patterns. By varying these parameters within a single process step, different isolation heights are achieved, providing design flexibility while maintaining high fabrication efficiency through process integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the creation of semiconductor device structures with isolation patterns of varying heights using the same pattern transferring process, reducing fabrication time and costs while enhancing design flexibility.
Implementation Method 1
The first energy treating process and the second energy treating process are electron-beam (e-beam) writing processes
Implementation Method 2
forming an energy-sensitive layer over the target layer... The energy-sensitive layer includes a cross-linking compound having a cross-linking functional group
Data Source
AI summary
A method for preparing a semiconductor device structure is provided. The method includes forming a target layer over a semiconductor substrate; forming an energy-sensitive layer over the target layer; performing a first energy treating process to form a plurality of first treated portions in the energy-sensitive layer; performing a second energy treating process to form a plurality of second treated portions in the energy-sensitive layer; removing the first treated portions and the second treated portions to respectively form a plurality of first openings and a plurality of second openings; transferring the first openings and the second openings into the target layer to respectively form a plurality of third openings and a plurality of fourth openings; and transferring the third openings and the fourth openings into the semiconductor substrate to respectively form a plurality of fifth openings and a plurality of sixth openings.