Semiconductor Isolation Structure With Layered High-k Dielectrics
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Solution Overview
Problem
The miniaturization of semiconductor integrated circuit (IC) devices leads to challenges in maintaining structure stability, capacitance impact, and current leakage due to inadequate isolation between components, necessitating improved isolation methods to enhance device stability.
Innovation Solution
A method for manufacturing a multi-gate device involving the formation of layered elements with trench isolation and the use of rare-earth element-containing dielectric materials to improve isolation between semiconductor layers, utilizing specific etching processes and dielectric layers to achieve effective separation and reduce capacitance impact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If device miniaturization is pursued to reduce IC size and cost, then device size and cost are reduced, but isolation between components deteriorates leading to structure instability, increased capacitance impact, and current leakage
Solution Approach 1:
The isolation structure includes a first dielectric layer and a second dielectric layer formed over the first dielectric layer. The second dielectric layer has a different dielectric constant than the first dielectric layer, enabling optimized electrical isolation performance in miniaturized semiconductor devices.
2Reliability
If isolation structures are enhanced to improve component isolation, then structure stability and isolation performance are improved, but device complexity increases
Solution Approach 1:
The patent applies different dielectric materials with specific properties to different regions and layers of the isolation structure. The first dielectric layer uses materials like silicon oxide for general isolation, while the second dielectric layer employs materials with different dielectric constants (such as silicon nitride or low-k materials) targeted at specific isolation challenges. This localized material selection optimizes isolation performance without uniformly increasing complexity across the entire device
Solution Approach 2:
The isolation structure is divided into multiple discrete dielectric layers, each performing specific isolation functions. The first dielectric layer handles baseline isolation requirements, while the second dielectric layer addresses enhanced isolation needs in specific areas. This segmentation allows independent optimization of each layer and simplifies the manufacturing process by treating isolation as a multi-step but modular procedure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach effectively enhances isolation between components, improves device stability, and reduces capacitance impact while providing better resistance to ion bombardment and allowing for the use of chlorine-based etching without damaging the semiconductor structures.
Implementation Method 1
utilizing specific etching processes and dielectric layers to achieve effective separation and reduce capacitance impact
Implementation Method 2
utilizing specific etching processes and dielectric layers to achieve effective separation
Data Source
AI summary
A device includes a first semiconductor structure, a second semiconductor structure, and an isolation structure which is disposed between the first and second semiconductor structures, and which includes a dielectric material having a dielectric constant higher than 8 and lower than 16. A method for manufacturing the device is also disclosed.