Semiconductor Isolation Structure Layout for Hybrid Substrate Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Challenges in forming isolation structures of different heights in different regions of hybrid substrates during MOS fabrication lead to yield losses and increased manufacturing costs, while existing methods fail to achieve optimal packing density and dielectric isolation.
Innovation Solution
A method for forming isolation structures of varying heights in separate operations, involving the formation of dielectric structures with base structures and isolation structures in distinct regions, followed by epitaxial growth and planarization to create semiconductor layers, allowing for independent optimization of device regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If isolation structures of different heights are formed in different regions of hybrid substrates using existing methods, then device functionality is achieved, but yield losses occur and manufacturing costs increase
Solution Approach 1:
The patent divides the formation of isolation structures into separate operations for different regions. Specifically, first isolation structures are formed in first device regions, then second isolation structures are formed in second device regions in a subsequent operation. This segmentation allows each region to be optimized independently, reducing yield losses and manufacturing costs associated with forming all isolation structures simultaneously.
Solution Approach 2:
The patent performs preliminary formation of dielectric structures with base structures and first isolation structures in first device regions before forming second isolation structures in second device regions. This preliminary action enables optimization of the first region's isolation structures without compromising the subsequent formation in the second region, thereby improving overall yield and reducing costs.
2Productivity
If isolation structures are formed in separate operations, then packing density is optimized and manufacturing costs are reduced, but process complexity increases
Solution Approach 1:
The patent segments the isolation structure formation into distinct operations for different device regions, enabling independent optimization of packing density in each region. The first device regions receive first isolation structures with specific height and configuration, while second device regions receive second isolation structures with different characteristics, maximizing overall packing density without excessive process complexity.
Solution Approach 2:
The patent applies local quality by providing different isolation structures tailored to specific device region requirements. First device regions receive first isolation structures optimized for their particular devices, while second device regions receive second isolation structures optimized for their devices. This localized optimization achieves high packing density while keeping each operation relatively simple.
3Reliability
If isolation structures of varying heights are formed, then dielectric isolation is improved and leakage is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent segments dielectric isolation optimization into separate operations for different device regions. First isolation structures with specific heights are formed in first device regions to provide appropriate dielectric isolation, then second isolation structures with different heights are formed in second device regions. This segmentation achieves superior dielectric isolation and leakage reduction while managing manufacturing complexity through systematic separation of operations.
Solution Approach 2:
The patent implements local quality by providing different height isolation structures in different device regions based on specific isolation requirements. First device regions receive first isolation structures with heights optimized for their devices, while second device regions receive second isolation structures with heights optimized for their devices. This localized approach achieves excellent dielectric isolation and leakage reduction without requiring a single complex uniform process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances packing density, reduces manufacturing costs, and achieves better dielectric isolation and lower leakage by optimizing isolation structures in separate operations.
Implementation Method 1
forming a semiconductor layer over the semiconductor substrate
Implementation Method 2
planarization to create semiconductor layers
Data Source
AI summary
A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.