Semiconductor Isolation Structure with Nested Voltage Control
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Solution Overview
Problem
Existing semiconductor isolation structures are limited in their ability to handle high voltage isolation, requiring large drift regions that consume significant die area and are costly, and lack scalability and reliability in maintaining uniform voltage distribution across nested insulating regions.
Innovation Solution
A semiconductor structure with nested insulating regions and a voltage control device comprising conducting elements, such as Zener diodes or resistors, connected in parallel with insulating regions to control and equalize voltage across each insulating region, allowing for scalable and reliable high voltage isolation with a smaller footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large drift region is used to provide high voltage isolation, then the isolation voltage capability is improved, but the die area consumption increases
Solution Approach 1:
The isolation structure is divided into multiple nested insulating regions (first, second, third insulating regions) with intermediate semiconductor regions between them. This segmentation allows the voltage isolation function to be distributed across multiple smaller regions rather than requiring a single large drift region, thereby reducing the overall die area while maintaining the required isolation voltage capability.
Solution Approach 2:
The patent employs a nested configuration where insulating regions and intermediate semiconductor regions are arranged concentrically around a central semiconductor region. The first insulating region surrounds the second semiconductor region, the second insulating region surrounds the first insulating region, and so on. This nesting principle enables compact arrangement of multiple isolation stages within a smaller footprint, directly addressing the area reduction goal while providing cumulative voltage isolation.
2Area of stationary object
If nested insulating regions are used to reduce die area, then the area consumption is reduced, but the voltage distribution uniformity across regions deteriorates
Solution Approach 1:
Voltage control devices are connected between adjacent intermediate semiconductor regions to provide feedback control of the voltage distribution. These devices monitor and adjust the voltage potential in each intermediate region, ensuring that voltage distributes uniformly across all insulating regions despite their different sizes and positions. This feedback mechanism compensates for the non-uniform voltage distribution that would naturally occur in nested structures.
Solution Approach 2:
The patent introduces voltage control devices that actively adjust electrical parameters (voltage potential) in the intermediate semiconductor regions. By dynamically controlling the voltage parameter in each intermediate region, the system maintains uniform voltage distribution across the nested insulating regions, overcoming the inherent non-uniformity caused by the nested geometry.
3Reliability
If conventional trench isolation is modified for high voltage, then the isolation voltage capability is improved, but the process complexity and cost increase
Solution Approach 1:
The nested insulating regions and intermediate semiconductor regions serve multiple functions: they provide voltage isolation, enable voltage distribution control, and allow integration of voltage control devices. This multi-functionality eliminates the need for separate high voltage isolation structures, reducing process complexity while achieving high voltage isolation capability.
Solution Approach 2:
The patent merges the isolation function with the voltage control function by integrating voltage control devices within the nested structure. The intermediate semiconductor regions serve both as isolation barriers and as connection points for voltage control devices. This merging of functions reduces the overall device complexity and eliminates the need for additional separate high voltage isolation processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides reliable and scalable high voltage isolation with improved uniformity of voltage distribution, reducing die area consumption and minimizing the need for costly process modifications, while enabling integration of high voltage functionality in integrated circuits.
Implementation Method 1
A voltage control device is provided, comprising a conducting element, which may be a Zener diode or a resistor, connected to at least one intermediate semiconductor region, in parallel with at least one insulating region, so as to control a voltage across the at least one insulating region
Data Source
AI summary
The invention relates to a semiconductor isolation structure. More particularly, the present invention relates to a semiconductor isolation structure suitable for providing high voltage isolation. Embodiments disclosed include a semiconductor structure (10) comprising: a first semiconductor region (R1), a second semiconductor region (R2) within the first semiconductor region (R1), and a voltage isolator (11) separating the first and second semiconductor regions (R1, R2), the voltage isolator (11) comprising: a nested series of insulating regions (T1, T2) around the perimeter of the second semiconductor region (R2), an intermediate semiconductor region (I1, I2) between each adjacent pair of nested insulating regions (T1, T2), and a voltage control device (12) comprising a conducting element (D1-D3) connected to at least one intermediate semiconductor region (I1, I2) in parallel with the at least one insulating region (T1, T2), so as to control a voltage across the at least one insulating region (T1, T2).