Semiconductor Isolation Structure for Protecting Passive Elements
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining the integrity of passive elements during the formation of active elements, leading to reliability issues.
Innovation Solution
The semiconductor device is designed with a specific structure where passive and active elements are adjacent, utilizing a substrate formed on a passive element, with a field insulating layer surrounding the sidewall of an insulating pattern and an element isolation layer with a different material, ensuring the passive element is not etched during active element formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a substrate is formed on a passive element to protect it, then the reliability of the passive element is improved, but the substrate may be etched during formation of the active element
Solution Approach 1:
The patent divides the isolation structure into two distinct segments: a field insulating layer that surrounds the sidewall of the insulating pattern, and an element isolation layer with a different material that prevents etching of the substrate. This segmentation allows each layer to perform its specific function independently, resolving the contradiction between protecting the passive element and preventing substrate etching.
Solution Approach 2:
The element isolation layer acts as an intermediary barrier between the etching process used to form active elements and the substrate containing passive elements. By introducing this intermediate protective layer with different material properties, the patent prevents harmful etching effects from reaching the substrate while allowing the necessary fabrication processes to proceed.
2Productivity
If passive and active elements are disposed adjacent to each other, then device density is improved, but the passive element may be damaged during active element formation
Solution Approach 1:
The patent applies preliminary protective actions by forming the field insulating layer and element isolation layer before the etching process used to create active elements. These pre-formed protective structures counteract the potential harmful effects of subsequent etching processes, allowing high-density adjacent positioning of passive and active elements without compromising passive element integrity.
Solution Approach 2:
The patent applies different material properties and structural characteristics to different regions: the field insulating layer provides lateral protection around the insulating pattern, while the element isolation layer provides vertical protection at the boundary. This localized quality differentiation enables adjacent positioning of elements while providing targeted protection where needed.
Data Source
AI summary
A semiconductor device includes a first region in which a passive element is provided, a second region adjacent to the first region and in which an active element is provided, a lower interlayer insulating layer in the first region and the second region, an insulating pattern in the second region and on an upper surface of the lower interlayer insulating layer, the insulating pattern extending in a first direction, a substrate in the first region, on the upper surface of the lower interlayer insulating layer, and spaced apart from the insulating pattern in the first direction, the substrate including silicon, and a field insulating layer in the second region and on the upper surface of the lower interlayer insulating layer, the field insulating layer at least partially surrounding a sidewall of the insulating pattern.