Semiconductor Isolation Layout for Reverse Battery Leak Prevention
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Solution Overview
Problem
Existing semiconductor devices fail to adequately prevent leak currents when a battery is connected in the opposite direction, leading to potential damage and inefficiencies.
Innovation Solution
A semiconductor device configuration that includes a main element and a sensing element integrated on the same chip, with an isolation region using an element-isolation insulating film and a first wire to electrically isolate the main element and sensing element, ensuring proper operation and preventing leak currents by maintaining a high breakdown voltage even when the battery is connected incorrectly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a battery is connected in the opposite direction, then the device should continue to operate, but a leak current flows causing potential damage and reduced breakdown voltage
Solution Approach 1:
The patent divides the semiconductor device into separate main element and sensing element regions, with the sensing element having its own independent well region and drift region. This segmentation allows the sensing element to be isolated from the main element's high-voltage stress, preventing leak current paths while maintaining detection functionality during reverse battery connection.
Solution Approach 2:
The patent introduces a dedicated isolation region with element-isolation insulating film positioned between the main element and sensing element. This intermediary structure acts as a barrier that blocks harmful electrical fields and leak current paths, allowing the device to withstand reverse battery connection without damage while maintaining normal sensing operation.
2Area of stationary object
If the main element and sensing element are integrated on the same chip, then space is saved, but the breakdown voltage is reduced due to lack of isolation
Solution Approach 1:
The patent extends the isolation structure vertically into the substrate with the element-isolation insulating film and isolation region, creating a three-dimensional barrier between elements. This vertical dimension approach maintains compact horizontal layout while achieving sufficient electrical isolation for high breakdown voltage, reconciling the conflict between integration density and voltage strength.
Solution Approach 2:
The dedicated isolation region with element-isolation insulating film serves as an intermediary barrier between the main element and sensing element. This intermediate structure enables close integration of elements for space efficiency while simultaneously providing the electrical isolation necessary to maintain high breakdown voltage ratings.
3Device complexity
If no isolation region is provided between main element and sensing element, then device complexity is reduced, but leak current cannot be prevented
Solution Approach 1:
The patent segments the semiconductor device into distinct functional regions with the sensing element separated from the main element by an isolation region. This segmentation creates physically separated zones that prevent harmful electrical interactions and leak current paths, achieving reliable protection without excessive complexity through systematic regional division.
Solution Approach 2:
The element-isolation insulating film and isolation region act as intermediary structures that physically and electrically separate the main element and sensing element. This intermediate barrier prevents direct harmful interactions while allowing both elements to function, achieving reliable leak current prevention with minimal added complexity through a single dedicated isolation layer.
Data Source
AI summary
A semiconductor device includes a main element and a sensing element each including a drift region of a first conductivity-type, a well region of a second conductivity-type provided at an upper part of the drift region, a first main electrode region of the first conductivity-type provided at an upper part of the well region, a gate electrode buried with a gate insulating film interposed in a trench, and a main electrode connected to the first main electrode region, the isolation region including an element-isolation insulating film provided on a top surface of a semiconductor base body interposed between the well regions, and a first wire provided on a top surface of the element-isolation insulating film and electrically connected to the main electrode of the main element.