Semiconductor Isolation Ring Structure for 3DIC Bias Shorting
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the increasing prominence of bias shorting problems between three-dimensional integrated circuits (3DICs) on a wafer, which deteriorate signal-to-noise ratio and test reliability during chip probing (CP) tests.
Innovation Solution
The introduction of a semiconductor structure with an isolation ring and seal ring structure that laterally encloses the active region, incorporating a wiring and via layer, and an encapsulant material, which enhances electrical isolation and reduces bias shorting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If 3DICs are stacked to increase circuit density, then processing capabilities and power consumption are improved, but bias shorting problems between 3DICs worsen
Solution Approach 1:
The patent segments the wafer structure by introducing isolation rings that divide the wafer into separate isolated regions. Each 3DIC is confined within its own isolated region, preventing electrical interference and bias shorting between stacked 3DICs while maintaining high circuit density through vertical stacking.
Solution Approach 2:
The patent introduces an intermediary isolation structure (isolation ring with encapsulant material) between stacked 3DICs. This intermediary layer provides electrical isolation and prevents direct electrical contact between power domains of different 3DICs, eliminating bias shorting problems while allowing the 3DICs to remain closely stacked for high density.
2Power
If 3DICs are stacked to improve processing capabilities, then power consumption is reduced, but signal-to-noise ratio deteriorates
Solution Approach 1:
The isolation ring segments the wafer into electrically isolated regions, confining each 3DIC within its own region. This segmentation prevents noise and electrical interference from propagating between stacked 3DICs, improving signal-to-noise ratio while maintaining the high processing capabilities enabled by 3D stacking.
Solution Approach 2:
The encapsulant material within the isolation ring acts as an intermediary barrier between stacked 3DICs. It provides electrical isolation that prevents noise coupling and interference, thereby improving signal-to-noise ratio during chip probing tests while allowing the stacked configuration to maintain high processing capabilities.
3Reliability
If isolation structures are added to reduce bias shorting, then test reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple functions into the isolation ring structure. It simultaneously provides electrical isolation, physical separation, and encapsulation of the active region. This consolidation achieves improved test reliability through bias shorting prevention while minimizing the increase in device complexity by using a single integrated structure rather than multiple separate components.
Solution Approach 2:
The isolation ring is designed as a multi-functional structure that performs multiple roles: electrical isolation between 3DICs, physical separation, and encapsulation of the active region. This universality allows the structure to improve test reliability through bias shorting prevention without proportionally increasing device complexity, as one structure accomplishes multiple protective functions.
Data Source
AI summary
A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate having an isolation ring extending in the direction substantially parallel to the surface of the substrate, an active region over the substrate and laterally enclosed by the isolation ring, a seal ring structure over the substrate, the seal ring structure laterally enclosing the active region and including at least a wiring layer and at least a via layer, and an encapsulant material laterally enclosing the seal ring structure.