Semiconductor Isolation Trench Layout With Single-Mask Etching
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Solution Overview
Problem
Traditional manufacturing processes for memory devices require separate processes for the memory cell and peripheral regions, leading to increased complexity and cost.
Innovation Solution
A method that etches isolation trenches in both the cell and peripheral regions simultaneously using a single mask, reducing the need for additional masks and integrating the processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate processes are used for manufacturing the memory cell region and peripheral region, then each region can be optimized independently, but the process complexity and manufacturing cost increase
Solution Approach 1:
The patent combines the manufacturing processes for the memory cell region and peripheral region into a single integrated process. Multiple isolation trenches (first isolation trenches in the cell region, second isolation trenches and third isolation trenches in the peripheral region) are formed simultaneously using a shared etching process and single mask layer, eliminating the need for separate independent processes while maintaining region-specific structural requirements
Solution Approach 2:
The patent creates a universal mask layer and etching process that serves multiple functions: defining both first isolation trenches in the cell region and second/third isolation trenches in the peripheral region. This single mask and process configuration performs what would traditionally require multiple separate masks and processes, reducing overall process complexity while maintaining the ability to optimize each region independently
2Manufacturing precision
If separate masks are used for the memory cell region and peripheral region, then each region can be precisely patterned, but the number of process steps and manufacturing cost increase
Solution Approach 1:
The patent merges the patterning functions of multiple separate masks into a single mask layer. This unified mask simultaneously defines the patterns for first isolation trenches in the cell region and second/third isolation trenches in the peripheral region, reducing the number of lithography steps and associated costs while maintaining the precision needed for each region's specific requirements
Solution Approach 2:
The single mask layer performs multiple patterning functions that would traditionally require separate masks. It universally defines all isolation trench patterns across both memory cell and peripheral regions in one lithography step, reducing manufacturing cost and process complexity while preserving the ability to achieve precise region-specific patterns
3Manufacturing precision
If independent processes are used for cell and peripheral regions, then each region can be optimized, but the production efficiency decreases
Solution Approach 1:
The patent combines multiple independent manufacturing processes into a single integrated process flow. The simultaneous formation of first isolation trenches in the cell region and second/third isolation trenches in the peripheral region using shared etching steps eliminates sequential processing delays, improving production efficiency while maintaining the ability to optimize each region's structure independently
Solution Approach 2:
The integrated process uses universal process steps (single mask formation, shared etching conditions, common filling procedures) that simultaneously accomplish multiple region-specific manufacturing goals. This multi-functional approach eliminates the need for separate process sequences, thereby increasing throughput and production efficiency while preserving region optimization capabilities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces process operations, improves production efficiency, and lowers costs by integrating the manufacturing of the cell and peripheral regions.
Implementation Method 1
The substrate is etched to form first isolation trenches in the cell region and second isolation trenches in the peripheral region
Implementation Method 2
A patterned mask layer is formed on a surface of the cell region and a surface of the peripheral region, and openings are provided in the patterned mask layer
Data Source
AI summary
A method for manufacturing a semiconductor structure includes the following operations. A substrate is provided, and is etched to form first isolation trenches in a cell region and a second isolation trench in a peripheral region. A first isolation dielectric layer is filled in each of the first isolation trenches and an isolation structure is formed in the second isolation trench. A patterned mask layer is formed on surfaces of the cell region and the peripheral region. The substrate and the first isolation dielectric layer are etched based on the patterned mask layer to form the third isolation trenches extending along a second direction. The third and first isolation trenches isolate multiple active pillars. The active pillar includes a first connecting end, a second connecting end and a channel region.