Semiconductor Joint Structure for Crack-Resistant Power Converters
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Solution Overview
Problem
Conventional semiconductor devices with power semiconductor elements have low thermal resistance at joints due to small contact areas, making them prone to cracking under thermal or mechanical fatigue.
Innovation Solution
A semiconductor device design featuring a wiring member with a top connected to both circuits via a bonding material, forming a larger contact area and increasing thermal resistance through the use of an alloy layer for enhanced joint integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a bonding wire is joined to an electrode at the top of the loop shape, then the structure is simple and easy to manufacture, but the contact area at the joint is small leading to low thermal resistance
Solution Approach 1:
The patent transitions from a point-contact joint (top of loop only) to a multi-point joint structure where the bonding wire is connected to the electrode at multiple locations including both ends of the wire and the top. This dimensional expansion from 0D point contact to 1D line contact significantly increases the contact area and thermal resistance without complicating the manufacturing process
Solution Approach 2:
The patent merges multiple connection points (both ends and top of the bonding wire) into a single integrated joint structure with the electrode. This combining of multiple contact areas creates a unified thermal pathway that enhances overall thermal resistance while maintaining structural simplicity and ease of manufacture
2Device complexity
If a small contact area is used at the joint, then the manufacturing process is simpler, but the allowance for crack development is small leading to lower reliability under thermal or mechanical fatigue
Solution Approach 1:
The patent expands the joint structure from a single-point contact to a multi-point contact arrangement, increasing the spatial distribution of the joint area. This dimensional change provides multiple pathways for stress distribution, thereby increasing crack tolerance without significantly increasing structural complexity
Solution Approach 2:
The patent designs the joint structure with inherent redundancy by creating multiple contact points between the bonding wire and electrode. This prior cushioning approach ensures that if cracks develop at one contact point, other contact points continue to provide thermal and mechanical support, thereby enhancing reliability under thermal or mechanical fatigue
Data Source
AI summary
A semiconductor device includes a first circuit, a second circuit, a wiring member, and a bonding material. The wiring member is connected to one of the first circuit and the second circuit. The bonding material is connected to the other of the first circuit and the second circuit. The wiring member includes a first end, a second end, and a top. The first end and the second end are connected to one of the first circuit and the second circuit. The top is located between the first end and the second end. The top is connected to the other of the first circuit and the second circuit with the bonding material in between.