Semiconductor Jumper Pattern with Blocking Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing complexity and miniaturization of semiconductor devices pose challenges in effectively forming jumper patterns, which are crucial for electrical connectivity and integration.
Innovation Solution
A semiconductor device design that includes a substrate with a gate structure, interlayer insulating layers, a blocking pattern, and a jumper pattern with jumper contact plugs that penetrate the insulating layers to connect with the substrate and a jumper section, ensuring electrical connectivity while preventing short-circuits and reducing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If jumper patterns are formed with increasing miniaturization, then device integration is improved, but manufacturing precision deteriorates
Solution Approach 1:
The jumper pattern is segmented into multiple components: jumper contact plugs penetrating the first interlayer insulating layer, and a jumper section connecting these plugs. This segmentation allows each component to be formed with appropriate precision requirements, making miniaturization feasible while maintaining manufacturability.
Solution Approach 2:
A blocking pattern is introduced as an intermediary layer between the jumper section and the first interlayer insulating layer. This blocking pattern with good etch selectivity serves as a mediator that defines the jumper section's lower boundary, preventing convex formation and ensuring precise positioning during fabrication.
2Reliability
If jumper contact plugs penetrate deep to contact substrate, then electrical conductivity is improved, but device thickness increases
Solution Approach 1:
The jumper section extends in the horizontal plane rather than vertically, connecting jumper contact plugs that are positioned at different lateral locations. This dimensional approach allows electrical connectivity to be achieved through lateral routing instead of deep vertical penetration, reducing overall device thickness.
Solution Approach 2:
The blocking pattern acts as an intermediary that supports the jumper section at an elevated position above the first interlayer insulating layer. This mediation allows the jumper section to achieve its electrical connection function without requiring the entire structure to be thick, as the blocking pattern provides a platform for the jumper section.
3Manufacturing precision
If blocking pattern is added to prevent convex formation, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The blocking pattern serves multiple functions simultaneously: it defines the lower boundary of the jumper section, prevents convex formation through good etch selectivity, and provides a support platform for the jumper section. This multi-functionality justifies the additional structure by eliminating the need for separate control mechanisms.
Solution Approach 2:
The blocking pattern is formed with specific material properties (good etch selectivity) that fundamentally change the fabrication parameters. This material parameter choice simplifies subsequent processing steps by enabling selective etching and self-aligned formation of the jumper section, offsetting the structural complexity addition.
Data Source
AI summary
A semiconductor device includes a substrate having a transistor area, a gate structure disposed on the transistor area of the substrate, a first interlayer insulating layer covering the gate structure, a blocking pattern disposed on the first interlayer insulating layer, and a jumper pattern disposed on the blocking pattern. The jumper pattern includes jumper contact plugs vertically penetrating the first interlayer insulating layer to be in contact with the substrate exposed at both sides of the gate structure, and a jumper section configured to electrically connect the jumper contact plugs.