Semiconductor Package Layout for In-Operation Junction Temperature Sensing
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Solution Overview
Problem
Existing semiconductor devices struggle to accurately measure junction temperature during operation, particularly when the switching element is driven, as conventional methods like thermal resistance measurement are not suitable for real-world applications.
Innovation Solution
A semiconductor device configuration that includes a switching element with a temperature detection diode and additional terminals for connecting the diode, allowing junction temperature measurement while the element is driven by utilizing the temperature dependence of the diode's resistance change.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a thermal resistance measuring device is used to measure junction temperature, then measurement can be performed in a laboratory setting, but the measurement cannot be performed when the switching element is actually driven
Solution Approach 1:
The semiconductor device measures its own junction temperature using an integrated temperature detection diode and resistance measuring circuit, eliminating the need for external thermal resistance measuring devices. This self-measurement capability enables temperature monitoring during actual operation while maintaining measurement accuracy.
Solution Approach 2:
A temperature detection diode is introduced as an intermediary element within the switching element to sense junction temperature. The diode's resistance changes with temperature, providing a measurable signal that reflects the junction temperature without interfering with the switching element's normal operation.
2Measurement precision
If additional terminals are added to connect the temperature detection diode, then junction temperature measurement during operation becomes possible, but the number of terminals increases
Solution Approach 1:
The gate terminal is designed to serve multiple functions: it controls the switching element's operation and also provides a measurement path for the temperature detection diode's resistance. By configuring the resistance measuring circuit to use the gate terminal as one of its measurement points, the patent avoids adding extra terminals while enabling temperature measurement during operation.
Solution Approach 2:
The control circuit and resistance measuring circuit are merged into a single integrated circuit that can perform both switching control and temperature measurement functions. This integration allows the system to measure junction temperature during operation without requiring separate external measurement equipment or additional terminals.
3Adaptability or versatility
If the switching element is driven during measurement, then real-world measurement conditions are met, but accurate junction temperature measurement becomes difficult
Solution Approach 1:
The resistance measuring circuit performs temperature measurements periodically by applying a measurement voltage to the temperature detection diode at specific intervals. This periodic measurement approach allows the system to capture junction temperature at discrete moments during operation, achieving both operational compatibility and measurement accuracy.
Solution Approach 2:
The control circuit receives feedback from the resistance measuring circuit about the junction temperature and uses this information to monitor and manage the switching element's thermal state during operation. This feedback mechanism enables accurate temperature tracking while the element is being driven.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables stable and accurate junction temperature measurement during operation without increasing the number of terminals, facilitating easy integration and maintaining high withstand voltage.
Implementation Method 1
allowing junction temperature measurement while the element is driven by utilizing the temperature dependence of the diode's resistance change
Data Source
AI summary
A semiconductor device includes: a switching element including a drain electrode, a gate electrode, and a source electrode; a base supporting the switching element; and a first terminal, a second terminal, a third terminal, and a fourth terminal that each extend in the same direction. The switching element includes a temperature detection diode having a first electrode provided on the element obverse surface. Each of the drain electrode, the gate electrode, and the source electrode is electrically connected to a corresponding one of the first terminal, the second terminal, and the third terminal. The first electrode is electrically connected to the fourth terminal via a first wire.