3D Semiconductor Ladder Contact Layout for Easier Wire Routing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in three-dimensional semiconductor structures is to design a connection mode for functional devices that reduces the difficulty of wire arrangement, particularly in achieving high density, large capacity, and high speed while managing parasitic capacitance.
Innovation Solution
The semiconductor structure incorporates a ladder structure with multi-level steps, where each step includes a first part and a second part connected in different directions, and electrical contact structures that cover the top surfaces of these steps, allowing for contact with word lines or bit lines in different directions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional stacked semiconductor structure is adopted to improve integration level, then density and capacity are improved, but wire arrangement difficulty increases
Solution Approach 1:
The patent introduces a ladder structure with steps extending in different directions (first direction and second direction) to lead out electrical contact structures. This multi-directional arrangement in three-dimensional space provides additional pathways for wire routing, effectively resolving the wire arrangement difficulty while maintaining high integration level through vertical stacking.
2Ease of manufacture
If leads are arranged in same direction to simplify layout, then manufacturing is easier, but parasitic capacitance increases
Solution Approach 1:
The patent employs asymmetric arrangement where different leads (first lead and second lead) extend in different directions (first direction and second direction) from the electrical contact structures. This asymmetric, multi-directional configuration increases the spatial separation between adjacent leads, thereby reducing parasitic capacitance while remaining manufacturable through standardized multi-directional patterning processes.
Data Source
AI summary
The present disclosure discloses a semiconductor structure and a method for fabricating the semiconductor structure. The semiconductor structure includes a plurality of word lines and a plurality of bit lines; ladder structure, including multiple steps, each step includes a first part which extends along the first direction, and a second part which extends along the second direction; a plurality of electrical contact structures, the electrical contact structures is disposed on the top surfaces of a portion of the first part and the second part of the steps, and the electrical contact structures are electrically connected to the word lines or bit lines.