Semiconductor Bonding via Laser Through Holes
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Solution Overview
Problem
Conventional bonding methods for semiconductor devices, such as LED devices on glass substrates, often damage the electrode due to the adhesive layer adhering to it, affecting the bonding quality.
Innovation Solution
A bonding method involving the formation of holes on the substrate's bonding parts, aligning a semiconductor device with conduction parts, and using a laser beam to melt the conduction and bonding parts through these holes, or employing a buffer layer with a low melting point to form electrical contact without damaging the electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an adhesive layer structure is used to bond LED devices to a glass substrate, then the bonding quality is improved, but the adhesive layer adheres to the LED electrode and damages the electrode
Solution Approach 1:
A buffer layer is introduced as an intermediary between the adhesive layer and the LED electrode. This buffer layer receives the adhesive layer to prevent direct adhesion to the electrode, while still enabling electrical contact through laser melting. The buffer layer acts as a mediator that resolves the conflict between bonding requirements and electrode protection.
Solution Approach 2:
The electrical contact structure is segmented into multiple functional layers: the original electrode, the buffer layer, and the adhesive layer. This segmentation allows each layer to perform its specific function - the electrode provides electrical connection, the buffer layer prevents adhesion damage, and the adhesive layer enables bonding - thereby solving the contradiction between bonding quality and electrode integrity.
2Object-affected harmful factors
If a buffer layer with low melting point is used to form electrical contact, then the electrode is protected from damage, but additional manufacturing steps are required
Solution Approach 1:
The buffer layer is designed with specific material parameters - a low melting point that is lower than both the electrode and adhesive layer materials. This parameter change enables the buffer layer to melt selectively during laser processing, forming electrical contact while protecting the electrode. The specific melting point parameter is crucial for resolving the contradiction between electrode protection and process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables smooth electrical contact between semiconductor device conduction and bonding parts without damaging the electrode, ensuring effective bonding while maintaining the integrity of the semiconductor device.
Implementation Method 1
operating the laser to emit a laser beam from a lower part of the main substrate, wherein the laser beam passes through the plurality of holes of the two bonding parts to strike on the two conduction parts
Implementation Method 2
so as to melt each of the two conduction parts with one of the two bonding parts corresponding thereto
Data Source
AI summary
A bonding method of a semiconductor device is disclosed. The method includes steps of forming a plurality of holes on two bonding parts of a main substrate, respectively; disposing a semiconductor device on the main substrate, and aligning the two bonding parts with two conduction parts of the semiconductor device; aligning a laser to the conduction parts and operating the laser to emit a laser beam from a lower part of the main substrate, wherein the laser beam passes through the holes of the bonding part to strike on the conduction part, so as to melt each conduction part to bond with the bonding part. With configuration of the holes, the conduction parts and the bonding part can be smoothly bonded by using laser, so as to achieve the purpose of transferring the semiconductor device.