Semiconductor Laser Cleaving with Non-Overlapping Modified Spots

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Solution Overview

Problem

The existing laser processing methods for cutting semiconductor members, such as semiconductor wafers from ingots, face challenges in forming precise modified regions and fractures, which affect the quality and precision of the obtained semiconductor members.

Innovation Solution

A laser processing method that forms a series of non-overlapping modified spots along a virtual plane within the semiconductor object, using precise control of laser light to create fractures that serve as boundaries for cutting the semiconductor member with high precision, including the use of gallium nitride decomposition to generate nitrogen gas for fracture formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If laser light is used to form modified regions in semiconductor objects, then cutting capability is improved, but precision of fracture formation deteriorates

Engineering Contradiction:

Improvecutting capabilityVSAvoidprecision of fracture formation

Core Design Contradiction:

PowerVSManufacturing precision

Solution Approach 1:

The laser processing is divided into multiple steps where modified spots are formed at different positions along the virtual plane. First modified spots are formed at initial positions, then second modified spots are formed at different positions that do not overlap with the first modified spots or their corresponding fractures. This segmentation allows precise control of fracture formation while maintaining effective cutting capability.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The method forms modified spots and fractures in a predetermined sequence along the virtual plane. By preliminarily forming first modified spots and their corresponding fractures, then forming second modified spots at positions that avoid overlapping with existing fractures, the process ensures precise fracture formation while maintaining cutting effectiveness.

Inventive Principle:

Principle #10Preliminary action

2Manufacturing precision

If modified spots are formed along a virtual plane, then fracture precision is improved, but process complexity increases

Engineering Contradiction:

Improvefracture precisionVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The method incorporates feedback by monitoring the positions of formed modified spots and their corresponding fractures. The positions of second modified spots are determined based on feedback from the locations of first modified spots and their fractures, ensuring that second modified spots do not overlap with existing features. This feedback mechanism maintains fracture precision while managing process complexity through systematic position control.

Inventive Principle:

Principle #23Feedback

Solution Approach 2:

The patent replaces complex mechanical positioning systems with a virtual plane reference system. By defining a virtual plane and calculating modified spot positions relative to this plane, the method achieves high fracture precision without requiring complex mechanical adjustment mechanisms, thereby reducing device complexity while maintaining manufacturing precision.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the precise formation of fractures across virtual planes, allowing for the accurate cutting of semiconductor members with reduced unevenness and improved material efficiency, resulting in high-quality semiconductor wafers and devices.

Implementation Method 1

forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface

Methodology Applied

Scientific EffectLaser heating: Laser

Implementation Method 2

irradiating a semiconductor object such as a semiconductor ingot with laser light to form a modified region in the semiconductor object and to develop a fracture extending from the modified region

Methodology Applied

Scientific EffectLaser ablation: Laser Ablation

Implementation Method 3

including the use of gallium nitride decomposition to generate nitrogen gas for fracture formation

Methodology Applied

Scientific EffectThermolysis: Thermolysis

Data Source

PatentUS12194570B2Laser processing method, semiconductor member manufacturing method, and laser processing device

Publication Date: 2025.01.14 HAMAMATSU PHOTONICS KK

AI summary

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as not to overlap the plurality of first modified spots, by causing laser light to enter into the semiconductor object from the surface.