Semiconductor Laser Conductive Layer Stacking for Burr Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor laser devices face issues with burr generation during wafer division, leading to degradation of far field pattern (FFP) and heat dissipation due to the thick third conductive layer, which affects mounting accuracy and laser beam blocking.
Innovation Solution
The semiconductor laser device is designed with a first conductive layer of smaller thickness, a second conductive layer thicker than the first, and a third conductive layer, where the emitting-side end portions of the second and third conductive layers are in a common plane, reducing burr impact and improving heat dissipation by spacing the semiconductor laser chip inward of the base.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thick third conductive layer is used, then electrical connection reliability is improved, but burr generation during wafer division increases causing FFP degradation and mounting accuracy deterioration
Solution Approach 1:
The conductive layer is divided into three separate layers (first, second, and third conductive layers) with different thicknesses and positions. The third conductive layer has smaller thickness and is positioned inward, while the first and second layers provide additional electrical connection area and reliability without causing burr generation issues
Solution Approach 2:
Different regions of the conductive structure have different thicknesses and properties. The third conductive layer has smaller thickness in the emitting-side region to prevent burr generation, while the first and second conductive layers provide thicker regions for reliable electrical connection in non-emitting areas
2Reliability
If a thick third conductive layer is used, then electrical connection is improved, but heat dissipation performance deteriorates
Solution Approach 1:
The conductive structure is segmented into three layers where the third conductive layer (closest to semiconductor laser chip) has smaller thickness to reduce heat resistance, while the first and second conductive layers provide additional electrical connection area without compromising heat dissipation
Solution Approach 2:
The thickness parameter of the third conductive layer is reduced compared to conventional single thick layers, optimizing the balance between electrical connection reliability and heat dissipation performance by minimizing the resistive path for heat flow
3Reliability
If the emitting-side end portion of the third conductive layer is arranged in a common plane with the base, then electrical connection area is maximized, but laser beam blocking occurs
Solution Approach 1:
The third conductive layer has different thickness and positioning characteristics compared to the first and second layers. Its emitting-side end portion is positioned inward relative to the other layers, creating a localized configuration that prevents laser beam blocking while maintaining electrical connection functionality
Solution Approach 2:
The conductive layers are arranged in a multi-layer vertical structure with different emitting-side end portion positions. This vertical dimensionality allows the third conductive layer to be positioned inward without reducing overall electrical connection area provided by the combined three layers
Data Source
AI summary
A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.