Semiconductor Laser Device Diffuse Reflection Surface
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Solution Overview
Problem
Semiconductor laser devices used in cameras face challenges in achieving uniform illumination and meeting eye safety requirements due to their narrow emission spectrum and directional emission characteristics, which are not suitable for applications requiring a Lambertian emission characteristic.
Innovation Solution
A semiconductor laser device design incorporating a diffusely reflective surface, where the laser diode is mounted immovably relative to the reflection surface, and the emission area is significantly larger than the diode's, ensuring a wide emission characteristic without the need for optical assemblies, thereby achieving a Lambertian emission pattern and improved eye safety.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a laser diode is used as the light source, then high modulation rate and efficiency are achieved, but the emission is directional and does not provide uniform illumination
Solution Approach 1:
A diffusely reflective surface is introduced as an intermediary between the laser diode and the target area. This surface receives the directional laser radiation and redistributes it uniformly in all directions, converting the directional emission into omnidirectional illumination while preserving the high modulation rate capability of the laser diode
2Quantity of substance
If a laser diode is used, then a narrow emission spectrum is achieved, but eye safety requirements are not met
Solution Approach 1:
The diffusely reflective surface acts as a mediator that spatially distributes the concentrated spectral energy from the laser diode across a wider area and in multiple directions, reducing the intensity concentration that poses eye safety risks while maintaining the spectral efficiency of the laser source
3Illumination intensity
If optical assemblies are added to achieve wide emission characteristic, then uniform illumination is improved, but device complexity increases
Solution Approach 1:
The complex optical assembly (lens, reflector, diffuser combination) is extracted and replaced by a single diffusely reflective surface that achieves the same wide emission characteristic and uniform illumination effect, significantly simplifying the device structure while maintaining performance
Solution Approach 2:
The emission characteristic is changed from directional to omnidirectional by altering the reflection properties of the surface. By using a diffusely reflective surface with high reflectivity, the system achieves wide emission without requiring complex optical components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables a more uniform illumination and reduced eye safety concerns by combining a narrow emission spectrum with a spatially wide emission characteristic, while maintaining high modulation rates and efficiency.
Implementation Method 1
The at least one reflection surface is designed to diffusely reflect the radiation generated by the at least one laser diode
Data Source
AI summary
Various embodiments may relate to a semiconductor laser device, including at least one laser diode, and at least one reflection surface which reflects diffusely and which is irradiated by the laser diode during operation, and an additional light-nontransmissive housing body having a cutout. The laser diode is the sole light source of the semiconductor laser device. The laser diode is mounted immovably relative to the at least one reflection surface. Light emitted by the semiconductor laser device during operation has the same spectral components as, or fewer spectral components than, light emitted by the laser diode. An interspace between the laser diode and the at least one reflection surface is free of an optical assembly. A light-emitting area of the semiconductor laser device is greater than a light-emitting area of the laser diode by at least a factor of 100.