Semiconductor Laser Direct Bonding to Slider
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Solution Overview
Problem
Conventional thermally-assisted magnetic recording heads face issues with poor connection and reduced yield due to misalignment and increased man-hours in bonding the semiconductor laser element to the slider, leading to inefficient near-field light output and thermal distortion.
Innovation Solution
A semiconductor laser element with a substrate and semiconductor laminated film, featuring a first and second electrode on one side and facet protection films, is bonded directly to an optical member without a submount, facilitating precise alignment and reducing thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a submount is used to bond the semiconductor laser element to the slider, then the bonding process can be performed, but misalignment occurs and connection quality deteriorates
Solution Approach 1:
The invention removes the submount from the bonding structure, directly bonding the semiconductor laser element to the slider. This extraction of the intermediate submount component eliminates the alignment errors and connection quality issues that arose from the multi-layer bonding process, while also simplifying the overall device structure.
Solution Approach 2:
The invention merges the functions of the submount and slider by directly bonding the semiconductor laser element to the slider body. This consolidation eliminates the intermediate bonding interface, improving alignment precision and reducing the number of bonding steps required in the manufacturing process.
2Productivity
If the semiconductor laser element is bonded via a submount, then electrical connection can be established, but the bonding process requires increased man-hours and reduces yield
Solution Approach 1:
By removing the submount from the bonding structure, the invention reduces the number of bonding steps from multiple sequential bonding operations to a single direct bonding process. This extraction simplifies the manufacturing workflow, reduces man-hours, and improves production yield while maintaining reliable electrical and thermal connections.
3Temperature
If conventional bonding methods are used with a submount, then the semiconductor laser element can be mounted, but thermal resistance increases
Solution Approach 1:
The invention removes the submount from the thermal conduction path, creating a direct thermal connection between the semiconductor laser element and the slider. This extraction eliminates the additional thermal interfaces and associated thermal resistance, improving heat dissipation efficiency while simplifying the bonding structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the alignment and bonding process, reducing man-hours and improving yield while minimizing thermal resistance and ensuring stable near-field light output for high-density recording.
Implementation Method 1
When a voltage is applied between the first electrode 47 and the terminal portion 22, laser light is outputted through the emission portion 46a
Implementation Method 2
A near-field light output device configured to output near-field light directs laser light to an optical waveguide where a near-field light generating element is disposed, and outputs near-field light generated by the near-field light generating element
Implementation Method 3
an optical waveguide 15, there is provided a near-field light generating element (not shown) that generates near-field light
Implementation Method 4
The second electrode of the semiconductor laser element 40 is bonded, via a solder material 29, to a terminal surface 21b of a submount 21
Data Source
AI summary
A semiconductor laser element is provided with: a substrate formed of a semiconductor; a semiconductor laminated film, which is laminated on the substrate, and which includes an active layer; a first electrode and a second electrode, which are provided on surfaces parallel to the active layer on the side where the semiconductor laminated film is formed on the substrate; and a facet protection film that is provided on both the facets, which are perpendicular to the active layer, and which face each other. In the semiconductor laser element, the facet is used as a fixing surface for the semiconductor laser element, said facet having the facet protection film formed thereon.