Semiconductor Laser Assembly Dispersion Compensation
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Solution Overview
Problem
Current semiconductor-laser-device assemblies require pulse compressors to achieve high peak power, which complicates the system and increases manufacturing costs.
Innovation Solution
Incorporating a dispersion compensation optical system to optimize the chirp state and pulse expansion of laser light emitted from a mode-locked semiconductor laser element, allowing it to be amplified without a pulse compressor, thereby eliminating the need for additional optical components and associated losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a pulse compressor is used to achieve high peak power, then the peak power is improved, but the device complexity increases and manufacturing cost increases
Solution Approach 1:
The patent extracts and eliminates the pulse compressor component from the laser system by optimizing the semiconductor optical amplifier's internal structure. The layered structure body with specific waveguide designs and optical confinement factors enables the system to achieve high peak power without requiring external pulse compression equipment, thus reducing device complexity while maintaining power output.
Solution Approach 2:
The patent changes key optical parameters including the optical confinement factor (set to 3% or less), waveguide thickness (0.6 μm or more), and refractive index differences to optimize pulse amplification. By adjusting these parameters, the system achieves high peak power output through the semiconductor optical amplifier alone, eliminating the need for pulse compressors and simplifying the overall device architecture.
2Power
If a pulse compressor is used to achieve high peak power, then the peak power is improved, but the manufacturing cost increases
Solution Approach 1:
The patent removes the pulse compressor component from the system, directly reducing manufacturing costs associated with purchasing, integrating, and maintaining external pulse compression equipment. The semiconductor optical amplifier's optimized layered structure performs pulse compression functions internally, eliminating the need for separate pulse compressor modules and reducing overall manufacturing expenditure.
Solution Approach 2:
The semiconductor optical amplifier is designed to perform multiple functions simultaneously: optical amplification, pulse compression, and beam shaping. This multi-functionality eliminates the need for separate pulse compressor equipment, reducing the number of components that need to be manufactured and integrated, thereby lowering manufacturing costs while maintaining high peak power output.
3Power
If additional optical components are added to amplify laser light, then the amplification capability is improved, but the optical losses increase
Solution Approach 1:
The patent merges the amplification and pulse compression functions into a single semiconductor optical amplifier module. By combining these functions that would traditionally require separate components, the system reduces the number of optical interfaces and alignment steps, thereby minimizing optical losses while maintaining high amplification capability and peak power output.
Solution Approach 2:
The patent optimizes the optical confinement factor to 3% or less and adjusts waveguide dimensions to minimize scattering and absorption losses. By carefully controlling these optical parameters, the system achieves high amplification capability with reduced optical losses, eliminating the need for additional loss-introducing components like pulse compressors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the generation of high peak power laser light with a simpler system design, reducing costs and optical losses, while maintaining efficient energy output.
Implementation Method 1
a dispersion compensation optical system on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted
Implementation Method 2
a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly
Data Source
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AI summary
A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.