Semiconductor Laser Facet Breaking for High-Power Output
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Solution Overview
Problem
Conventional semiconductor lasers face challenges in achieving high optical power densities due to facet damage, which leads to increased threshold currents, reduced efficiency, and stability issues, primarily because of defects caused by material removal processes like etching during facet creation.
Innovation Solution
The semiconductor laser employs facets generated through breaking, avoiding material removal in the facet regions, resulting in low defect density and high-quality facets, with geometric structuring and acoustic layers to enhance breaking precision and reduce defects, allowing for efficient index guidance and improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If material removal processes like etching are used during facet creation, then geometric structuring and index guidance are improved, but facet quality deteriorates due to increased defect density
Solution Approach 1:
The manufacturing process is segmented into distinct stages: geometric structuring is performed first on the top side, then the substrate is broken to create facets. This separation allows each process to be optimized independently, with the breaking process creating high-quality facets free from etching defects while the prior structuring provides necessary geometric guidance.
Solution Approach 2:
Geometric structuring is performed as a preliminary action before facet creation through breaking. The structuring establishes the necessary geometric framework and index guidance in advance, allowing the subsequent breaking process to focus solely on creating high-quality facets without the need for additional material removal.
2Manufacturing precision
If material removal is performed to create facets, then geometric definition is improved, but optical output power is reduced due to facet damage and defects
Solution Approach 1:
The conventional approach is inverted: instead of creating facets through material removal (etching), the invention uses breaking to create facets. This inversion eliminates the harmful effects of etching on facet quality while maintaining geometric definition through the prior structuring step, thereby enabling high optical output powers without facet damage.
3Manufacturing precision
If etching is used for facet creation, then structural definition is improved, but threshold current increases due to facet defects
Solution Approach 1:
The process is segmented so that structural definition is achieved through geometric structuring performed before breaking, while facet creation is achieved through breaking alone. This segmentation ensures that facets are free from etching-induced defects, thereby reducing threshold currents while maintaining adequate structural definition through the prior structuring step.
4Manufacturing precision
If material removal processes are used, then geometric precision is improved, but long-term stability deteriorates due to facet damage
Solution Approach 1:
Geometric precision is established through preliminary structuring before the breaking process. This preliminary action creates the necessary geometric framework without compromising facet quality, allowing the subsequent breaking process to produce facets with both high geometric precision and excellent long-term stability free from etching damage.
Solution Approach 2:
The invention inverts the conventional approach by using breaking instead of etching for facet creation. Combined with preliminary structuring, this inversion achieves both high geometric precision and superior long-term stability, eliminating the trade-off present in conventional processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high optical output powers with reduced risk of facet damage, achieving low threshold currents, high differential efficiency, and increased long-term stability, while minimizing defects and optimizing the far-field optical field.
Implementation Method 1
one or more active zones for generating laser radiation
Implementation Method 2
the facets can be generated in high quality by means of breaking
Data Source
AI summary
In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.