Semiconductor Laser Facet Cleaning and Dielectric Film Formation
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Solution Overview
Problem
The existing methods for manufacturing semiconductor laser elements using Electron Cyclotron Resonance (ECR) sputtering devices, where plasma is generated without high frequency bias voltage, are not suitable for ensuring reliability due to potential peeling of the dielectric film.
Innovation Solution
A method involving a plasma sputtering device with a quartz or aluminum oxide covered target, where the semiconductor light emission element is cleaned and then transported to a deposition device without exposure to the atmosphere, allowing for the formation of a dielectric film using a dielectric target, ensuring higher reliability by minimizing film peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If plasma cleaning is performed without applying high frequency bias voltage to the target, then cleaning capability is improved, but dielectric film peeling occurs and reliability deteriorates
Solution Approach 1:
The patent applies a bias voltage to the target during plasma cleaning to change the plasma environment parameters. This modification allows effective impurity removal while preventing dielectric film peeling, resolving the contradiction between cleaning capability and film adhesion reliability
Solution Approach 2:
The patent introduces a dielectric layer between the semiconductor light emission element and the target. This intermediary layer prevents direct plasma damage to the dielectric film while still allowing effective cleaning of the semiconductor surface, thus maintaining both cleaning effectiveness and film adhesion
2Ease of operation
If the semiconductor light emission element is exposed to atmosphere after cleaning, then handling is simplified, but surface contamination occurs and reliability decreases
Solution Approach 1:
The patent maintains the semiconductor light emission element in a vacuum environment throughout the dielectric film formation process. This inert environment prevents surface contamination that would occur upon atmospheric exposure, ensuring surface cleanliness and reliability while the vacuum system handles the element transfer
3Device complexity
If a dielectric film is formed on a cleaned facet without protective measures, then manufacturing process is simplified, but film peeling occurs and reliability worsens
Solution Approach 1:
The patent applies a bias voltage to the target before and during the dielectric film formation process. This preliminary action prepares the surface and maintains optimal plasma conditions, ensuring strong film adhesion without requiring additional complex process steps
Solution Approach 2:
The dielectric layer acts as a protective intermediary during the film formation process, preventing plasma damage to the underlying dielectric film while allowing the film to be formed with strong adhesion through the controlled plasma environment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a semiconductor laser element with improved reliability by effectively removing natural oxide films and preventing dielectric film peeling, enhancing the semiconductor's surface stability and emission properties.
Implementation Method 1
cleaning the facet by irradiating the facet with plasma in the plasma sputtering device
Implementation Method 2
a plasma sputtering device in which a target is covered with quartz
Implementation Method 3
forming a dielectric film on the cleaned facet in the deposition device
Data Source
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AI summary
A method of manufacturing a semiconductor laser element includes: a cleaning process of holding a semiconductor light emission element having a configuration that emits light from a facet thereof in a plasma sputtering device in which a target is covered with quartz, and cleaning the facet by irradiating the facet with plasma in the plasma sputtering device; and a dielectric film formation process of transporting the cleaned semiconductor light emission element to a deposition device without exposing the semiconductor light emission element to an atmosphere, and forming a dielectric film on the cleaned facet in the deposition device.