Surface-Emitting Semiconductor Laser Reflector Layout for Heat Dissipation
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Solution Overview
Problem
Surface emitting semiconductor laser elements with distributed Bragg reflector (DBR) layers on GaN substrates face heat dissipation issues, affecting their reliability and performance.
Innovation Solution
The semiconductor device incorporates a first light reflector and a second light reflector, with the first light reflector acting as a heat dissipation enhancer, and a compound semiconductor part that uses epitaxial lateral overgrowth (ELO) to reduce threading dislocations, improving light emission efficiency and heat management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a distributed Bragg reflector (DBR) layer is used on a GaN substrate, then light reflection performance is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The patent segments the light reflector into two distinct parts: a first light reflector (DBR layer) positioned closer to the active layer for optimal light reflection, and a second light reflector (metal reflector) positioned closer to the heat generation source for effective heat dissipation. This segmentation allows each component to specialize in its primary function without compromising the other.
Solution Approach 2:
The patent introduces an intermediary heat dissipation layer between the GaN substrate and the light-emitting layer. This intermediary layer acts as a thermal conduit, efficiently transferring heat away from the active region while maintaining the optical performance of the DBR layer. The intermediary layer mediates between the conflicting requirements of light reflection and heat dissipation.
2Ease of manufacture
If threading dislocations are present in the semiconductor layer, then manufacturing process is simpler, but light emission efficiency deteriorates
Solution Approach 1:
The patent extracts and removes threading dislocations from the semiconductor layer through a controlled growth process. By using epitaxial lateral overgrowth (ELO) technique, dislocations are confined to specific regions and excluded from the active light-emitting area, thereby improving light emission efficiency while maintaining manufacturing feasibility.
Solution Approach 2:
The patent applies local quality by creating regions with different dislocation densities within the semiconductor layer. The active light-emitting region is engineered to have low dislocation density for high efficiency, while other regions can tolerate higher dislocation densities. This localized approach allows the device to achieve high performance in critical areas without requiring perfect quality throughout the entire structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability and light emission efficiency of the semiconductor laser elements by effectively managing heat dissipation and reducing defects, thereby improving the overall performance and design flexibility of the semiconductor device.
Implementation Method 1
a first light reflector located above the base substrate, a first mask located above the first light reflector
Implementation Method 2
a second light reflector located above the compound semiconductor part and the first light reflector
Implementation Method 3
a compound semiconductor part located above the base semiconductor part
Data Source
AI summary
A semiconductor device includes a base substrate, a first light reflector located above the base substrate, a first mask located above the first light reflector, a base semiconductor part located above the first mask, a compound semiconductor part located above the base semiconductor part, and a second light reflector located above the compound semiconductor part and the first light reflector.