Semiconductor Laser Element With Non-Uniform Hydrogen Distribution
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Solution Overview
Problem
The semiconductor laser element's power conversion efficiency is deteriorated due to increased contact resistance between the p-side electrode and the semiconductor layer caused by insulating layers in the waveguide, leading to higher voltage drops and temperature increases.
Innovation Solution
A semiconductor light-emitting element with a p-type cladding layer containing hydrogen, where the hydrogen concentration is lower at the center and higher at the edges, reducing resistance and Joule heat at the central part of the waveguide, and higher outside the waveguide to enclose current and light effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If insulating layers are provided in the waveguide to improve temperature distribution, then temperature uniformity is improved, but contact resistance between p-side electrode and semiconductor layer increases
Solution Approach 1:
The patent applies local quality by creating a non-uniform hydrogen concentration distribution within the p-type cladding layer. The hydrogen concentration is made lower at the center portion (where contact resistance is critical) and higher at the edge portion (where temperature control is needed). This spatial variation in material composition allows simultaneous optimization of electrical contact properties at the center and thermal management at the edges, resolving the contradiction between reducing contact resistance and maintaining temperature uniformity.
2Temperature
If insulating layers are provided in the waveguide, then temperature increase is reduced, but voltage drop increases due to higher contact resistance
Solution Approach 1:
The patent uses local quality by varying hydrogen concentration spatially within the p-type cladding layer. The center portion has low hydrogen concentration to minimize dopant binding and reduce contact resistance, thereby reducing voltage drop and improving power conversion efficiency. The edge portion has high hydrogen concentration to provide thermal management benefits. This localized differentiation resolves the contradiction between reducing temperature increase and maintaining energy efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances power conversion efficiency by reducing resistance and temperature uniformity within the waveguide, stabilizing light output intensity and maintaining high efficiency.
Implementation Method 1
Joule heat generated at the central portion of the p-type cladding layer whose temperature tends to become maximum can be reduced
Data Source
AI summary
A semiconductor light-emitting element includes: an n-type cladding layer formed of a nitride semiconductor; an active layer which is arranged above the n-type cladding layer and formed of a nitride semiconductor; a p-type cladding layer arranged above the active layer and formed of a nitride semiconductor; and a p-side electrode arranged above the p-type cladding layer, wherein the p-type cladding layer contains hydrogen, and a first concentration of the hydrogen at a center of the p-type cladding layer in a region below the p-side electrode is lower than a second concentration of the hydrogen at a position located on a side closer to an outer edge than to the center in the region below the p-side electrode.