Semiconductor Laser Marking at Substrate-Metal Boundary
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Solution Overview
Problem
Existing semiconductor device inspection methods fail to provide a clear marking position that can be easily confirmed from both the front and back surfaces, leading to difficulties in physical analysis.
Innovation Solution
The method involves performing laser marking on a semiconductor device by irradiating it with laser light of a wavelength transmitted through the substrate from the substrate side, forming the marking at the boundary between the substrate and the metal layer, allowing for easy confirmation from both sides and preventing contamination by controlling the marking to remain inside the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If laser marking is performed from the substrate side to enable inspection of packaged samples, then the marking can be applied to devices that cannot be irradiated from the front surface, but the marking position becomes difficult to confirm from both front and back surfaces
Solution Approach 1:
The patent utilizes the substrate as an optical window to irradiate laser light from the back surface side, enabling marking capability for packaged samples while maintaining position confirmability through the substrate's transparency
Solution Approach 2:
The patent forms markings at specific locations such as the boundary between the substrate and metal layer, or within the metal layer itself, to create positions that are easily confirmable from both front and back surfaces
2Adaptability or versatility
If laser marking is performed from the substrate side, then marking can be applied to packaged samples, but debris may contaminate the front surface of the semiconductor device
Solution Approach 1:
The patent performs laser marking at specific depths such as the boundary between substrate and metal layer or within the metal layer, rather than penetrating through to the front surface, thereby preventing debris contamination while maintaining marking effectiveness
Solution Approach 2:
The patent applies laser irradiation with controlled energy to achieve marking at the desired depth without excessive penetration that would cause front surface contamination, balancing marking effectiveness with surface cleanliness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables accurate and efficient confirmation of the marking position from both the front and back surfaces during physical analysis, preventing contamination and ensuring precise marking formation.
Implementation Method 1
irradiating the semiconductor device with laser light having a wavelength that is transmitted through the substrate from the substrate side
Implementation Method 2
irradiating the semiconductor device with laser light... so that a marking is formed
Implementation Method 3
The irradiating the semiconductor device with laser light may include controlling the irradiation with the laser light so that at least one of cavities, reforming, and melting is generated as the marking
Data Source
AI summary
An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device (D) including a substrate (SiE) and a metal layer (ME) formed on the substrate (SiE), and the inspection method includes specifying a fault point (fp) in the semiconductor device (D) by inspecting the semiconductor device (D), and irradiating the semiconductor device (D) with laser light having a wavelength that is transmitted through the substrate (SiE) from the substrate (SiE) side so that a marking is formed at least at a boundary between the substrate (SiE) and the metal layer (ME) on the basis of the fault point (fp).