Laser Marking Uniformity in Semiconductor Wafers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing laser marking methods for semiconductor wafers face challenges due to thickness variability of the device layer, leading to unpredictable and unreadable marks, as the interaction of the laser with the semiconductor structure results in inconsistent spot size and appearance, making it difficult for automated readers to identify the markings.
Innovation Solution
The method involves selecting a buried structure thickness equal to k×λlaser/(2×n), where λlaser is the wavelength of peak emission, k is an integer greater than zero, and n is the index of refraction for the buried structure, to optimize laser marking by reducing interference and ensuring uniformity of marks regardless of device layer thickness variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If laser marking is performed on semiconductor wafers with variable device layer thickness, then marking can be applied to existing wafers, but the markings become unpredictable and unreadable due to interference effects
Solution Approach 1:
The patent changes the optical parameter (laser wavelength) to match the physical parameter (buried layer thickness) through the relationship λlaser = 2×n×d/k. By selecting a laser wavelength that satisfies this equation for the given buried layer thickness, the interference effects are eliminated and consistent markings are achieved regardless of device layer thickness variations.
Solution Approach 2:
The patent replaces the mechanical approach of physically adjusting or selecting wafers based on thickness with an optical approach. Instead of mechanically controlling wafer thickness to achieve readable markings, the method uses optical wavelength selection to achieve the same goal, substituting mechanical precision requirements with optical parameter matching.
2Measurement precision
If device layer thickness is controlled to ensure readable markings, then marking legibility improves, but manufacturing complexity and cost increase
Solution Approach 1:
Instead of controlling device layer thickness to ensure readable markings, the patent changes the approach by controlling the buried layer thickness and selecting the laser wavelength accordingly. This parameter substitution eliminates the need for tight device layer thickness control while maintaining marking legibility.
Solution Approach 2:
The patent introduces the buried layer as an intermediary element that mediates between the device layer and the laser marking process. By making the buried layer thickness the controlling parameter and matching it with the laser wavelength, the system achieves readable markings without requiring precise control of the device layer thickness.
3Manufacturing precision
If laser wavelength is selected based on buried layer thickness, then marking uniformity improves, but additional measurement and selection steps are required
Solution Approach 1:
The patent establishes a universal relationship (λlaser = 2×n×d/k) that can be applied to any buried layer thickness. Once this relationship is established, the same principle can be used across different wafer batches and production runs, reducing the need for complex case-by-case wavelength selection and enabling standardized marking procedures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in improved legibility, machine-readability, and uniformity of laser markings, reducing the impact of device layer thickness variations and facilitating the use of semiconductor wafers in automated fabrication processes.
Implementation Method 1
A laser beam can be used to locally melt the material and thereby a visible 'spot' was produced
Implementation Method 2
A laser beam can be used to locally melt the material
Implementation Method 3
the interaction of the laser with the semiconductor structure results in inconsistent spot size and appearance
Implementation Method 4
n is the index of refraction for the buried structure
Data Source
AI summary
In one embodiment, methods for making semiconductor devices are disclosed.


