Semiconductor Laser N-Contact Thermal Conduction
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Solution Overview
Problem
Conventional semiconductor lasers have high thermal resistance due to complex and expensive mounting methods, limiting their operating current and efficiency in heat dissipation.
Innovation Solution
A semiconductor laser design with a thermally conductive n-contact that extends from the p-conducting region through the active zone to the n-conducting region, reducing thermal resistance by allowing efficient heat dissipation without intersecting the resonator path, enabling surface mounting and eliminating the need for intermediate carriers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional mounting methods are used, then the semiconductor laser can be manufactured with standard processes, but the thermal resistance is high and heat dissipation is limited
Solution Approach 1:
The patent combines the electrical contact function and thermal conduction function into a single integrated structure. The n-contact serves dual purposes: it provides electrical connection for current injection and acts as a thermal conduction path for heat dissipation from the active zone to the n-conducting region, eliminating the need for separate mounting structures.
Solution Approach 2:
The n-contact is designed as a multi-functional element that simultaneously performs electrical conduction and thermal conduction. This universal component replaces the need for complex intermediate carriers and specialized mounting structures, achieving both electrical connection and heat dissipation through a single element.
2Temperature
If the n-contact extends through the active zone, then thermal resistance is reduced and heat dissipation is improved, but the resonator path may be intersected or blocked
Solution Approach 1:
The patent applies local quality by positioning the n-contact in specific regions where it provides thermal conduction without interfering with the resonator path. The n-contact is strategically located to extend through the active zone in areas that do not obstruct the optical mode, creating localized thermal conduction paths while preserving optical functionality in critical regions.
Solution Approach 2:
The patent resolves the conflict by transitioning the problem to a spatial dimensionality consideration. The n-contact is arranged in a configuration that occupies different spatial dimensions or planes than the resonator path, allowing thermal conduction through the active zone without intersecting the optical path. This dimensional separation enables both functions to coexist.
3Reliability
If intermediate carriers are used for mounting, then the semiconductor laser can be securely mounted and electrically connected, but the thermal resistance increases and the structure becomes more complex
Solution Approach 1:
The patent extracts and eliminates the intermediate carrier from the mounting structure. By removing this unnecessary component, the design achieves direct thermal and electrical connection between the active zone and the n-conducting region through the n-contact, reducing thermal resistance and simplifying the overall structure while maintaining mounting reliability.
4Reliability
If complex mounting structures are used, then electrical connection and heat dissipation can be achieved, but the manufacturing cost increases and the process becomes more expensive
Solution Approach 1:
The patent merges multiple functions (electrical connection, thermal conduction, and structural support) into the single n-contact element and semiconductor layer sequence. This integration eliminates the need for separate intermediate carriers and complex mounting structures, significantly reducing manufacturing steps and costs while maintaining reliable electrical and thermal connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves a significant reduction in thermal resistance, allowing for efficient heat dissipation and increased operating current while simplifying manufacturing and mounting processes, making the semiconductor laser more cost-effective and efficient.
Implementation Method 1
The n-contact extends from the p-conducting region and through the active zone into the n-conducting region... allowing efficient heat dissipation
Data Source
AI summary
In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).