Semiconductor Pattern Width Control via Laser Gas Reaction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional exposure techniques, such as reduction projection exposure using ultraviolet light, are limited in forming fine patterns with minute design rules on semiconductor substrates, and there is a need for improved methods to control pattern height and width in semiconductor manufacturing.
Innovation Solution
A method involving the formation of a target etching layer on a substrate, patterning to create layers with specific heights and widths, and using a combination of gases with a laser beam to react with the pattern surfaces, reducing sidewall portions to achieve narrower pattern widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional reduction projection exposure using ultraviolet light is used, then the manufacturing process is simple and well-established, but the ability to form fine patterns with minute design rules is limited
Solution Approach 1:
The patent replaces conventional optical exposure systems with a laser-based direct writing system. The laser beam directly patterns the photoresist layer without requiring complex optical projection lenses, enabling ultra-fine pattern formation with design rules below 10 nm while simplifying the overall exposure apparatus complexity
Solution Approach 2:
The patent changes the fundamental parameter of light wavelength from ultraviolet range to laser wavelength range, and employs controlled photoresist development parameters to achieve precise pattern dimensions. The laser wavelength and exposure dose are carefully controlled to form patterns with precise width and height control
2Length of moving object
If laser beam exposure is used to form ultra-fine patterns, then pattern width can be reduced, but control over pattern height becomes difficult
Solution Approach 1:
The patent employs dynamic control of the laser exposure process by varying exposure dose, scanning speed, and performing multiple sequential exposures at different doses. This dynamic approach enables independent control of pattern width and height, allowing precise dimensional control in both directions
Solution Approach 2:
The patent uses periodic action through multiple sequential laser exposure steps with different doses and scanning conditions. Each exposure step contributes differently to pattern width and height formation, enabling precise control of both dimensions through cumulative effect
3Productivity
If pattern features are reduced to increase integration, then device density increases, but sidewall roughness and pattern uniformity deteriorate
Solution Approach 1:
The patent employs continuous laser scanning exposure that uniformly processes the entire photoresist layer without interruption. This continuous action ensures uniform energy distribution and consistent sidewall formation across all pattern features, maintaining smooth sidewalls even at reduced feature sizes
Solution Approach 2:
The patent incorporates feedback control through real-time monitoring of exposure parameters and adjustment of laser power, scanning speed, and focus. This feedback mechanism compensates for variations in the exposure process, maintaining consistent pattern quality and smooth sidewalls across the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise control of pattern dimensions, improving the formation of fine semiconductor patterns and enhancing the manufacturing process by reducing sidewall roughness and achieving finer feature sizes.
Implementation Method 1
performing a reaction process which reacts a surface of the pattern portion with the first and second gases by irradiating a laser beam on the pattern layer
Implementation Method 2
reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer
Implementation Method 3
removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width
Data Source
AI summary
Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.