Semiconductor Chip Division via Laser Ablation and Plasma Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for dividing semiconductor wafers into chips are inefficient and material-dependent, lacking a simple and reliable approach that can handle curved or kinked side surfaces and varying material compositions effectively.
Innovation Solution
A method involving coherent radiation to cut through a functional layer along a dividing pattern, combined with chemical methods for forming separating trenches, allowing for efficient division of semiconductor chips with minimal material selectivity and adaptability to different materials, particularly using short laser pulses and plasma etching techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional cutting methods are used to divide semiconductor wafers, then the division process can be performed, but the efficiency is strongly dependent on the material being cut and the process is time-consuming
Solution Approach 1:
The patent replaces mechanical cutting methods with laser-based coherent radiation to divide the composite. The laser beam ablates material along the dividing pattern without mechanical contact, eliminating the strong dependence on material properties that limits conventional mechanical cutting efficiency.
Solution Approach 2:
The patent uses controllable laser parameters (power, pulse duration, wavelength) to optimize the division process. By adjusting these parameters, the system achieves high-speed material removal independent of the specific semiconductor material composition, thereby improving productivity while reducing division time.
2Adaptability or versatility
If conventional cutting methods are used, then division can be performed, but the method lacks adaptability to different material compositions and layer thicknesses
Solution Approach 1:
The laser-based division system serves as a universal tool that can process different semiconductor materials (silicon, gallium arsenide, sapphire, etc.) and various layer thicknesses without requiring tool changes or complex reconfiguration. This universality provides material independence while maintaining ease of manufacture through a single versatile process.
Solution Approach 2:
The system achieves adaptability to different materials and thicknesses by dynamically adjusting laser parameters such as power, pulse duration, and scanning speed. This parameter control enables the same equipment to handle diverse materials without increasing overall process complexity.
3Reliability
If conventional cutting methods are used, then division can be performed, but the process is sensitive to production fluctuations and requires high precision
Solution Approach 1:
Replacing mechanical cutting with laser ablation eliminates mechanical wear, tool alignment issues, and contact forces that cause sensitivity to production fluctuations. The non-contact laser process provides consistent, repeatable results that improve division reliability while reducing the system's sensitivity to manufacturing precision variations.
Solution Approach 2:
The laser ablation process inherently provides self-alignment and self-regulation through the material's own absorption characteristics. The process automatically adapts to slight variations in material properties without requiring external precision control mechanisms, thereby improving reliability while reducing sensitivity to manufacturing tolerances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient and reliable division of semiconductor chips with reduced material selectivity, high throughput, and adaptability to structural variations, independent of material composition and layer thickness, while simplifying automation and reducing sensitivity to production fluctuations.
Implementation Method 1
the functional layer is cut through by means of coherent radiation, in particular along the dividing pattern
Implementation Method 2
By means of the material removal using coherent radiation, at the side surfaces of the semiconductor chips, which surfaces are produced during division, traces of a material removal by coherent radiation are produced in regions
Implementation Method 3
combined with chemical methods for forming separating trenches
Data Source
AI summary
The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. Separating trenches are formed in the substrate along the dividing pattern. The functional layer is cut through along the dividing pattern by means of coherent radiation. Each divided semiconductor chip has part of the semiconductor layer sequence, part of the substrate, and part of the functional layer. The invention further relates to a semiconductor chip.