Semiconductor Singulation via Laser Polycrystallization
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Solution Overview
Problem
Existing methods for producing polycrystalline semiconductor bodies often result in cracking during the singulation process, which is undesirable for applications in semiconductor components like diodes and radio-frequency circuits.
Innovation Solution
A method involving focused electromagnetic radiation with a wavelength of at least 1064 nm and power density less than 1×10^8 W/cm^2 is used to convert monocrystalline semiconductor bodies into polycrystalline regions, allowing for precise control of the polycrystalline structure formation and singulation without stress-induced cracking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an amorphous or polycrystalline semiconductor body region is produced in the separating region to break up the crystalline structure for singulation, then the semiconductor body can be divided into individual components, but cracks arise in the separating region which compromises structural integrity
Solution Approach 1:
The patent applies local quality by creating a polycrystalline region specifically in the separating zone while maintaining monocrystalline structure in the semiconductor component sections. This localized structural modification enables easy singulation in the separating region without compromising the structural integrity of the functional monocrystalline regions, thus resolving the contradiction between ease of manufacture and structural strength.
Solution Approach 2:
The patent segments the semiconductor body into distinct functional regions (monocrystalline component sections) and a separating region (polycrystalline). This segmentation allows the separating region to be optimized for singulation while the component sections maintain their monocrystalline structure for structural integrity, resolving the contradiction between ease of manufacture and strength.
2Adaptability or versatility
If conventional polycrystalline deposition methods are used to create polycrystalline regions, then polycrystalline structures can be formed for applications like recombination regions, but the process is complex and time-consuming
Solution Approach 1:
The patent replaces complex mechanical/polycrystalline deposition processes with a simpler laser-based method. By using laser irradiation to induce localized polycrystalline formation directly in the separating region, the patent eliminates the need for complex deposition equipment and multiple processing steps, thus reducing device complexity while maintaining adaptability for creating polycrystalline structures.
Solution Approach 2:
The patent changes the physical parameters (using laser irradiation with specific wavelength and power density) to directly transform the crystal structure from monocrystalline to polycrystalline in the separating region. This parameter-based approach simplifies the production process compared to conventional deposition methods while maintaining the ability to create polycrystalline structures for various applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of durable polycrystalline semiconductor body regions that can function as recombination or rapid diffusion zones within semiconductor components, enhancing the performance and reliability of power semiconductor components and integrated circuits.
Implementation Method 1
an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section
Implementation Method 2
converting a monocrystalline semiconductor body into a polycrystalline semiconductor body region
Data Source
AI summary
Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.