Semiconductor Laser Ridge With Separation Groove Suppressing Current Leakage
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Solution Overview
Problem
Current semiconductor lasers experience current leakage between the gain region and the Q-switch region, which adversely affects Q-switch operation, leading to inefficiencies in high-power pulse generation.
Innovation Solution
The semiconductor laser design includes a ridge part with alternating gain and Q-switch regions separated by a separation groove, where the bottom surface of the groove is positioned higher than the foot of the ridge part, creating a depletion region with higher resistance and suppressing light scattering in the gain region to increase injection carrier density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a Q-switch operation is implemented in a semiconductor laser to generate high-power pulses, then the optical pumping efficiency is improved and high-power pulse output is achieved, but current leakage occurs between the gain region and the Q-switch region which adversely affects the Q-switch operation
Solution Approach 1:
The ridge part is divided into multiple gain regions and Q-switch regions that are alternately arranged and separated by separation regions. This segmentation prevents current leakage between adjacent gain and Q-switch regions while maintaining the Q-switch operation functionality for high-power pulse generation.
Solution Approach 2:
The separation regions are designed with specific structural characteristics (separation grooves with bottom surfaces at positions higher than the foot of the ridge part) to create localized high-resistance depletion regions. This local quality change effectively blocks current leakage paths between gain and Q-switch regions without affecting the overall laser performance.
2Reliability
If the separation groove bottom surface is positioned at the foot of the ridge part to maximize separation, then the current leakage is reduced, but the manufacturing precision becomes more difficult to control
Solution Approach 1:
The separation groove bottom surface is designed to be positioned at a predetermined height within the second semiconductor layer, higher than the foot of the ridge part. This preliminary positioning ensures sufficient separation distance to create effective depletion regions that block current leakage, while remaining within manufacturable depth limits for precise control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively suppresses current leakage and enhances the injection carrier density, allowing for higher power and more efficient Q-switch operation by maintaining a higher resistance between the gain and Q-switch regions.
Implementation Method 1
a depletion region formed between the gain region and the Q-switch region causes a part between the gain region and the Q-switch region to have a higher resistance
Implementation Method 2
light scattering of carriers in the gain region is suppressed to increase injection carrier density
Data Source
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AI summary
In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.