Compound Semiconductor Device Laser-Processed Side Surface

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Solution Overview

Problem

Current light emitting diodes (LEDs) face challenges in brightness enhancement and process yield improvement, particularly in the formation of semiconductor stacks on substrates, which can lead to cracks and damage during the manufacturing process.

Innovation Solution

A method involving a substrate with a patterned structure, including a semiconductor stack with specific deteriorated regions formed by laser processing, which creates a concave-convex surface structure to enhance light extraction and prevent damage during the breaking process, thereby improving the yield and brightness of light emitting devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional LED manufacturing processes are used, then production can proceed with standard methods, but cracks and damage occur during the breaking process leading to reduced yield

Engineering Contradiction:
Improveprocess yieldVSAvoidcrack resistance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary action by forming deteriorated regions in the substrate before the breaking process. These deteriorated regions are created through laser processing that modifies the substrate structure in advance, creating a concave-convex surface structure that prevents crack propagation during subsequent breaking operations, thereby improving both yield and reliability

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent converts the harmful effect of laser processing (which can cause substrate damage) into a beneficial outcome. By carefully controlling laser parameters, the deteriorated regions created by laser processing actually improve crack resistance and yield by creating a structure that guides and prevents unwanted crack propagation during the breaking process

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Illumination intensity

If the substrate surface is kept smooth and intact, then manufacturing is simpler, but light extraction efficiency is reduced

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidsubstrate processing complexity
Core Design Contradiction:
Illumination intensityVSEase of manufacture

Solution Approach 1:

The patent applies local quality by creating deteriorated regions with specific properties in localized areas of the substrate rather than uniformly across the entire surface. The laser processing creates distinct concave-convex structures in specific regions that enhance light extraction, while other regions maintain their original properties, thus improving light extraction without requiring complete substrate restructuring

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent replaces conventional mechanical surface treatment methods with laser processing. Instead of using mechanical abrasion or chemical etching to create surface structures for light extraction, the invention uses laser energy to directly create the desired concave-convex surface morphology, simplifying the manufacturing process while achieving the optical enhancement

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method enhances light extraction and improves the reliability and yield of light emitting devices by forming a concave-convex surface structure that reduces the risk of cracks and damage during the manufacturing process, leading to increased output power and efficiency.

Implementation Method 1

a first deteriorated region 221 and a second deteriorated region 222 are formed on a side surface 200s of the wafer substrate 200

Methodology Applied
Scientific EffectLaser heating: Laser

Data Source

PatentUS10418513B2Compound semiconductor device and method of fabricating the same
Publication Date: 2019.09.17 ENNOSTAR CORP
  • US10418513B2 patent drawing
  • US10418513B2 patent drawing
  • US10418513B2 patent drawing

AI summary

A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.