Multi-Region Semiconductor Laser Mirrors for Speckle Reduction

The patent applies local quality by making each resonator region have different optical properties through varying layer sequence structures. Specifically, different resonator regions are designed with different semiconductor layer sequences or different thicknesses of optical layers, causing each region to emit at different wavelengths even though they are based on the same overall semiconductor layer sequence architecture. This local differentiation eliminates speckle interference while maintaining close spacing between emitters.

The patent segments the semiconductor laser structure into multiple resonator regions, each with its own active region and resonator cavity. By dividing the semiconductor body into distinct resonator regions with independent optical characteristics, the patent enables each segment to emit at different wavelengths, thereby resolving the speckle interference problem while achieving compact emitter arrangement.

Within the integrated laser diode chip structure, the patent implements local quality by varying the semiconductor layer sequences in different resonator regions. Each region's layer sequence is specifically designed to produce a unique emission wavelength, thereby eliminating image artifacts while maintaining the compact integrated chip architecture. This is achieved through local modifications to the layer structure rather than using identical layers throughout.

The patent employs composite material structures by combining different semiconductor layer sequences within the same chip. Each resonator region uses a composite structure of semiconductor layers with varying compositions and thicknesses, allowing each region to have tailored optical properties and emission wavelengths while remaining part of the integrated chip system.

The patent manages manufacturing complexity by segmenting the device into modular resonator regions, where each region can be designed with its own layer sequence. This segmentation allows for standardized manufacturing processes to be applied to each module independently, making the overall complex structure more manageable and manufacturable through repeated use of similar fabrication techniques.

The patent achieves wavelength differentiation primarily by changing physical parameters such as layer thicknesses and material compositions within the semiconductor layer sequences. By systematically varying these parameters across different resonator regions rather than fundamentally changing the overall structure, the patent maintains manufacturing feasibility while achieving the desired wavelength diversity.