Semiconductor Stress Introduction via Laser Recrystallization
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Solution Overview
Problem
Existing methods for introducing mechanical stress in semiconductor devices increase manufacturing complexity and are not applicable to various integrated circuits due to process limitations.
Innovation Solution
A method involving the formation of a stress introduction region on a semiconductor substrate, followed by amorphization and recrystallization using laser to introduce stress, which simplifies the process and allows for broader application in integrated circuit fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If stress liner or embedding semiconductor into source/drain region is used to introduce mechanical stress, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent extracts the stress introduction function from complex multi-step processes (stress liner deposition, embedding) and implements it through a single laser treatment step applied to a dedicated stress introduction region, thereby reducing manufacturing complexity while maintaining stress introduction capability
Solution Approach 2:
The patent divides the semiconductor structure into distinct functional regions: a device region and a separate stress introduction region. This segmentation allows stress to be introduced in a dedicated area without complicating the device fabrication process, as the stress region can be treated independently via laser irradiation
2Reliability
If stress liner or embedding semiconductor into source/drain region is used to introduce mechanical stress, then device performance is improved, but applicability to various integrated circuits is limited
Solution Approach 1:
The patent creates a universal stress introduction method that can be applied to various integrated circuit types. By using laser irradiation on a dedicated stress introduction region, the same basic process can be adapted to different device architectures (CMOS, bipolar, etc.) without requiring process-specific modifications, thereby enhancing versatility
Solution Approach 2:
The patent introduces a dedicated stress introduction region that acts as an intermediary structure between the device region and the stress source. This intermediary can be formed through standard photolithography and amorphization processes, and then activated by laser treatment, making the approach adaptable to various integrated circuit designs
3Productivity
If laser is used to recrystallize amorphized portion of stress introduction region, then stress is introduced efficiently, but process complexity increases
Solution Approach 1:
The patent performs preliminary amorphization of the stress introduction region through ion implantation or other standard semiconductor processes before applying the laser treatment. This preliminary action prepares the material to be more responsive to laser irradiation, enabling efficient stress introduction while using well-established fabrication techniques
Solution Approach 2:
The patent utilizes phase transitions of semiconductor material (crystalline ↔ amorphous) as a mechanism to enable stress introduction. By cycling the material through amorphization and then laser-induced recrystallization, stress is generated efficiently. This phase transition approach uses fundamental material properties rather than complex external stress application mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process and enables the introduction of stress in semiconductor devices, improving their performance by increasing carrier mobility, thus addressing the limitations of existing techniques.
Implementation Method 1
recrystallizing the amorphized portion of the at least one stress introduction region by laser
Implementation Method 2
recrystallizing the amorphized portion of the at least one stress introduction region by laser, thereby introducing stress into the at least one stress introduction region
Implementation Method 3
at least a portion of the at least one stress introduction region may be amorphized by selectively implanting ions into the at least a portion of the at least one stress introduction region
Data Source
AI summary
The invention relates to a semiconductor device and a method for manufacturing such a semiconductor device. A semiconductor device according to an embodiment of the invention may comprise: a substrate; a device region located on the substrate; and at least one stress introduction region separated from the device region by an isolation structure, with stress introduced into at least a portion of the at least one stress introduction region, wherein the stress introduced into the at least a portion of the at least one stress introduction region is produced by utilizing laser to illuminate an amorphized portion comprised in the at least one stress introduction region to recrystallize the amorphized portion. The semiconductor device according to an embodiment of the invention produces stress in a simpler manner and thereby improves the performance of the device.