Semiconductor Film Laser Irradiation Timing for Faster Crystallization
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Solution Overview
Problem
The existing laser processing apparatus for semiconductor films requires a long processing time due to the need for the semiconductor film to cool down to normal temperature between each laser beam irradiation, which increases the overall throughput and processing time.
Innovation Solution
A laser processing apparatus and method that includes a film state measuring instrument to adjust the timing and intensity of subsequent laser beam irradiations based on the measured state of the semiconductor film, allowing for reduced waiting times between irradiations by maintaining the film at a temperature above the freezing point but below the melting point.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the semiconductor film is irradiated with laser beam multiple times to grow crystal grains, then the crystallization quality is improved, but the processing time increases due to waiting for cooling between irradiations
Solution Approach 1:
The invention changes the temperature parameter control strategy by eliminating the cooling wait time between laser irradiations. Instead of waiting for the film to return to normal temperature, the system continuously irradiates the film while it remains in an elevated temperature state, allowing crystal grains to grow progressively across multiple irradiation passes without interruption.
Solution Approach 2:
The invention implements continuous useful action by removing the idle cooling period between laser irradiations. The semiconductor film remains in a temperature state suitable for crystal growth throughout the entire processing sequence, ensuring that each subsequent irradiation contributes productively to crystal grain development rather than waiting for thermal equilibrium.
2Productivity
If the laser beam intensity is increased to speed up processing, then the processing speed is improved, but the risk of overheating and damaging the semiconductor film increases
Solution Approach 1:
The invention applies periodic laser irradiation to the semiconductor film, where the film receives repeated pulses of laser energy while maintaining an elevated temperature state. This periodic action allows cumulative crystal growth without requiring full cooling cycles between pulses, effectively increasing processing speed while distributing thermal load through multiple shorter irradiation events rather than continuous high-intensity exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the processing time per semiconductor film and improves throughput by allowing subsequent laser beam irradiations when the film temperature reaches the freezing point, rather than waiting for it to return to normal temperature.
Implementation Method 1
a laser light source configured to irradiate a semiconductor film with a laser beam
Implementation Method 2
the temperature of the part of the semiconductor film where it is irradiated with the laser beam is raised from a normal temperature to near the melting temperature
Implementation Method 3
a film state measuring instrument configured to measure a state of the semiconductor film after the semiconductor film is irradiated with the laser beam
Implementation Method 4
the temperature of the part of the semiconductor film where it is irradiated with the laser beam is raised from a normal temperature to near the melting temperature (melting point). The crystals of the semiconductor film grow gradually by repeating melting and solidification.
Implementation Method 5
The crystals of the semiconductor film grow gradually by repeating melting and solidification
Data Source
AI summary
A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).