Semiconductor Laser Device With Transparent Conductive Layer
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Solution Overview
Problem
Semiconductor laser devices face challenges in achieving both high light emitting efficiency and electrical performance due to optical losses caused by metal electrode pads absorbing light.
Innovation Solution
A semiconductor laser device design featuring a ridged structure on the first semiconductor layer with a transparent conductive layer and an electrode pad layer that has empty areas, reducing light absorption and ensuring even electrical current distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrode pads completely cover the semiconductor layer to evenly supply electrical current, then electrical performance is improved, but optical loss increases due to light absorption by metal electrode pads
Solution Approach 1:
The electrode pad layer is segmented into multiple separate electrode pads instead of a continuous covering layer. This segmentation allows light to pass through the gaps between electrode pads, reducing optical absorption while still providing sufficient electrical contact points to maintain electrical performance.
Solution Approach 2:
Different regions of the semiconductor layer are contacted by electrode pads only where electrical connection is needed, rather than complete coverage. The electrode pads are strategically positioned to provide local electrical contact while leaving other regions transparent for light transmission.
2Loss of energy
If transparent conductive layer is added between electrode pad layer and first semiconductor layer to reduce light absorption, then optical loss is reduced, but device complexity increases
Solution Approach 1:
A transparent conductive layer is introduced as an intermediary between the metal electrode pad layer and the first semiconductor layer. This intermediate layer serves as a mediator that allows electrical current to pass through while being transparent to light, thus reducing optical absorption by the metal electrode pads.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design minimizes optical loss and enhances light emitting efficiency while maintaining electrical performance, achieving favorable optical and electrical performance simultaneously.
Implementation Method 1
a transparent conductive layer (150) is disposed between the electrode pad layer (140) and the first semiconductor layer (110)
Implementation Method 2
The light coming from the light emitting layer is then transformed into a laser beam with a narrow full width at half maximum (FWHM) in the laser resonator characterized by optical confinement effects
Implementation Method 3
a semiconductor layer with proper refraction index and band-gap design may be arranged on two sides of the light emitting layer; the arrangement of the refraction index and band-gap design of the semiconductor layer and the light emitting layer allows the semiconductor layer and the light emitting layer to form a double heterojunction (DJ) structure, so as to confine the carriers
Data Source
AI summary
A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.