Semiconductor Laser Cutting With Two-Density Modified Spots
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Solution Overview
Problem
The existing methods for forming modified regions in semiconductor objects to facilitate fracture formation during laser processing are not precise enough, leading to unsuitable semiconductor members due to inconsistent and unpredictable fracture widths.
Innovation Solution
A laser processing method involving the formation of first and second modified spots along a virtual plane with varying formation densities, where the second spots have a higher density and are connected, to control fracture extension perpendicular to the plane, ensuring high precision in fracture formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single-step laser processing method is used to form modified regions, then the process is simple and fast, but the fracture width is inconsistent and unpredictable
Solution Approach 1:
The laser processing is divided into two distinct steps: a first step forming modified regions at a first formation density, and a second step forming modified regions at a second formation density. This segmentation allows each step to contribute differently to the final fracture characteristics, achieving both efficiency and precision that a single step cannot provide.
Solution Approach 2:
The invention changes the formation density parameter between two processing steps. The first step uses a first formation density to create initial modified regions, while the second step uses a second formation density (different from the first) to create additional modified regions. This parameter variation enables control over fracture width and consistency while maintaining processing efficiency.
2Ease of manufacture
If laser light enters from the surface to form modified regions, then the process is straightforward, but the fracture extension perpendicular to the virtual plane cannot be suppressed
Solution Approach 1:
The invention applies different formation densities at different stages of the process. The first formation density creates initial modified regions with certain characteristics, while the second formation density creates additional modified regions that specifically suppress fracture extension perpendicular to the virtual plane. This local differentiation of quality achieves precise fracture control.
3Loss of time
If modified regions are formed with low formation density, then the processing time is short, but the fractures are not connected and precision is reduced
Solution Approach 1:
The first step performs a preliminary action by forming modified regions at a first formation density, creating initial fracture pathways. The second step then builds upon this foundation by forming additional modified regions at a second formation density, ensuring fracture connection and precision. This preliminary action approach divides the work into manageable stages.
Solution Approach 2:
The two-step process maintains continuity of useful action by having the second step follow the first step without interruption. The modified regions formed in the first step serve as a foundation for the second step, creating a continuous process that achieves both efficiency and precision through sequential, complementary actions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of suitable semiconductor members by accurately forming fractures across virtual planes, allowing for precise cutting and acquisition of high-quality semiconductor wafers or devices.
Implementation Method 1
causing laser light to enter into the semiconductor object from the surface
Implementation Method 2
forming a plurality of first modified spots along the virtual plane to obtain first formation density
Data Source
AI summary
There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.


