Semiconductor Laser Resonator Surfaces via Two-Stage Etching

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Solution Overview

Problem

The manufacturing of edge-emitting semiconductor lasers, particularly in blue or ultraviolet spectral regions, faces challenges with the variability, time-consuming, and cost-effectiveness of creating high-quality resonator surfaces through traditional scribing and breaking processes.

Innovation Solution

A method involving a two-stage etching process where recesses are formed by dry chemical etching and then wet-chemically etched to create resonator surfaces, allowing for singulation after surface formation, thereby decoupling singulation from resonator surface quality and achieving smooth surfaces with low roughness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If scribing and breaking process is used to manufacture resonator surfaces, then resonator surfaces can be formed, but the process is prone to variation, time-consuming, and costly

Engineering Contradiction:
Improveresonator surface qualityVSAvoidmanufacturing speed
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent replaces the mechanical scribing and breaking process with a chemical etching process. The resonator surfaces are formed by etching recesses in the semiconductor layer sequence using chemical solutions, eliminating the need for mechanical contact and associated variations. This substitution enables consistent surface quality while significantly reducing manufacturing time and cost.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent performs the resonator surface formation by etching recesses before the singulation step. By preparing the resonator surfaces in advance on the full wafer or substrate, the process decouples surface quality from the subsequent breaking/singulation step. This preliminary action ensures that surface quality is determined by the controlled etching process rather than by mechanical breaking variations.

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If scribing and breaking process is used to manufacture resonator surfaces, then resonator surfaces can be formed, but the process is costly

Engineering Contradiction:
Improveresonator surface qualityVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent replaces expensive mechanical scribing and breaking equipment and processes with chemical etching processes. The etching can be performed using standard semiconductor fabrication equipment, and the chemical solutions are relatively inexpensive. This substitution dramatically reduces capital equipment costs and per-unit manufacturing costs while maintaining or improving surface quality.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The chemical etching process is self-aligning and self-regulating to a degree. The etching chemistry naturally follows the pattern defined by the lithographic mask, and the process can be monitored and controlled through standard semiconductor manufacturing techniques. This reduces the need for expensive precision mechanical guidance systems and skilled manual operations.

Inventive Principle:
Principle #25Self-service

3Manufacturing precision

If scribing and breaking process is used, then resonator surfaces are formed, but the process is prone to variation

Engineering Contradiction:
Improveresonator surface consistencyVSAvoidprocess stability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent replaces mechanical scribing and breaking with chemical etching, which is inherently more consistent. Chemical etching processes are well-established in semiconductor manufacturing with tight process control capabilities. The etching rate and depth can be precisely controlled through chemistry formulation, temperature control, and timing, eliminating the random variations inherent in mechanical breaking processes.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent controls the etching process through multiple parameters including chemical solution composition, temperature, etching time, and mask pattern dimensions. By optimizing and controlling these parameters, the process achieves high consistency and repeatability. The etching depth and profile can be precisely tuned by adjusting these parameters, ensuring uniform resonator surfaces across wafers and production batches.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the production of high-quality resonator surfaces with reduced variability and cost, ensuring efficient and reliable manufacturing of semiconductor lasers with average roughness of at most 5 nm.

Implementation Method 1

The recesses are produced, for example, by a dry chemical etching process, such as a plasma etching process.

Methodology Applied
Scientific EffectDry chemical etching:

Implementation Method 2

the side faces of the recesses for forming resonator surfaces are wet-chemically etched

Methodology Applied
Scientific EffectWet chemical etching:

Data Source

PatentUS20240047935A1Method for producing a plurality of semiconductor lasers and semiconductor laser
Publication Date: 2024.02.08 AMS OSRAM INT GMBH
  • US20240047935A1 patent drawing
  • US20240047935A1 patent drawing
  • US20240047935A1 patent drawing

AI summary

The invention relates to a method for producing a plurality of semiconductor lasers, including the steps of: a) providing a substrate having a semiconductor layer sequence and having a plurality of component regions, each component region having at least one resonator region and being delimited perpendicular to the resonator region by singulation lines in the transverse direction and being delimited parallel to the resonator region by singulation lines in the longitudinal direction; b) forming recesses which overlap with the singulation lines in the transverse direction, using a dry-chemical etching method, wherein, when the substrate is seen from above, the recesses have in each case at least one transition, at which a first section of a side face of the recess and a second section of the side face of the recess form an angle of more than 180° in the recess; c) wet-chemical etching of the side faces of the recesses for the purpose of forming resonator surfaces; and d) singulating the substrate along the singulation lines in the transverse direction and in the longitudinal direction. Additionally, a semiconductor laser is specified.