Semiconductor Laser Window Region Disordered Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor laser elements suffer from catastrophic optical damage (COD) due to strong light densities, especially when driven under severe conditions, and existing window region techniques fail to effectively suppress higher-order energy oscillation absorption.
Innovation Solution
A semiconductor laser element with a window region featuring a disordered portion formed by group-III vacancy diffusion, where a promoting film absorbs a predetermined atom to enhance diffusion, and a non-window region with a quantum well structure, differentiated by an energy band gap difference of at least 50 meV, incorporating an impurity that preferentially substitutes group-V sites, such as carbon, to prevent disordering promotion and suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a window region is formed by IFVD method to reduce light absorption, then light absorption at fundamental oscillation is reduced, but light absorption at higher-order energy oscillation remains and COD occurs under severe conditions
Solution Approach 1:
The patent applies local quality by creating a disordered portion with specific spatial distribution in the window region. The disordered portion is formed by selective diffusion of group-III vacancies in a localized area, creating non-uniform local structure that specifically targets higher-order energy oscillation absorption while maintaining transparency at fundamental oscillation wavelengths.
Solution Approach 2:
The patent changes physical parameters by controlling the diffusion of group-III vacancies through thermal treatment. By adjusting treatment temperature and time, the disordered portion's characteristics are modified to achieve optimal energy band gap difference (≥50 meV) between window and non-window regions, specifically targeting higher-order oscillation suppression.
2Manufacturing precision
If thermal treatment is performed to promote vacancy diffusion and form disordered portion, then window region functionality is achieved, but impurity diffusion may occur and degrade device performance
Solution Approach 1:
The patent optimizes thermal treatment parameters (temperature, time, atmosphere) to promote vacancy diffusion while suppressing impurity diffusion. By carefully controlling these parameters, the disordered portion is formed with precise spatial distribution without significant impurity contamination in critical regions.
Solution Approach 2:
The patent employs a composite structure combining ordered and disordered portions within the window region. This composite approach allows the disordered portion to provide higher-order oscillation suppression while the overall window region maintains its light-transmission functionality, achieving multiple objectives simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces COD even under severe conditions, ensuring a highly reliable semiconductor laser element by adequately promoting disordering in the window region and suppressing it in the non-window region, thereby preventing laser light absorption at higher-order energy oscillations.
Implementation Method 1
a disordered portion formed by diffusion of group-III vacancies
Implementation Method 2
an impurity that preferentially substitutes a group-V site is doped in a layer near the active layer
Implementation Method 3
amplifying light generated by recombination of carriers within active layers
Data Source
Figure 1
Figure 2
Figure 3
AI summary
A semiconductor laser element 1 according to the present invention includes a window region 23 including a disordered portion formed by diffusion of a group-III vacancy, and a non-window region 24 including an active layer 15 of a quantum well structure, and has the disordered portion formed by providing on the window region 23 a promoting film that absorbs a predetermined atom and promotes the diffusion of group-III vacancy. An impurity that preferentially substitutes a group-V site is doped in a layer near the active layer 15, and a difference between an energy band gap in the window region and an energy band gap in the non-window region is equal to or larger than 50 meV.