Semiconductor Device Latch-Up Prevention via Reverse Current Preventing Layer
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Solution Overview
Problem
Conventional semiconductor devices suffer from latch-up issues in semiconductor integrated circuits when the drain electrode is negatively biased with respect to the source electrode, leading to poor noise immunity and complex transformer design requirements.
Innovation Solution
A semiconductor device with a high breakdown voltage semiconductor element, including a switching element and a JFET, where the second drain electrode is connected to a reverse current preventing layer on a separate semiconductor substrate, preventing current flow and thus avoiding latch-up, and allowing negative biasing of the drain electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the drain electrode is connected directly to the semiconductor integrated circuit, then the device complexity is reduced, but latch-up occurs causing poor reliability
Solution Approach 1:
The patent introduces a reverse current preventing layer as an intermediary component between the drain electrode and the semiconductor integrated circuit. This layer acts as a mediator that blocks reverse current flow while allowing normal operation, thereby preventing latch-up without significantly increasing overall device complexity.
2Object-affected harmful factors
If the drain electrode is negatively biased with respect to the source electrode, then noise immunity is improved, but latch-up occurs reducing reliability
Solution Approach 1:
The reverse current preventing layer is designed to preemptively block reverse current before it can cause latch-up. By establishing this protective barrier in advance, the device can safely operate with the drain electrode negatively biased with respect to the source electrode, thereby improving noise immunity without sacrificing reliability.
3Reliability
If a reverse current preventing structure is added, then reliability is improved, but device complexity increases
Solution Approach 1:
The reverse current preventing layer is implemented locally at the critical interface between the drain electrode and the semiconductor integrated circuit, rather than throughout the entire device. This localized approach provides targeted protection against latch-up while minimizing the increase in overall device complexity.
4Object-affected harmful factors
If the drain electrode is negatively biased, then lightning surge immunity is improved, but transformer design becomes complex
Solution Approach 1:
The reverse current preventing layer serves as an intermediary protective element that enables the drain electrode to be negatively biased with respect to the source electrode without causing latch-up. This configuration improvement enhances lightning surge immunity and simplifies transformer design by removing the need for complex protective circuitry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances noise immunity and lightning surge immunity, simplifying transformer design and reducing on-state resistance, while maintaining the ability to detect on-state voltage and supply starting power to control circuits.
Implementation Method 1
a reverse current preventing diode including a reverse current preventing layer of a second conductivity type formed at a surface of a second semiconductor substrate, and a well layer of a first conductivity type formed in the second semiconductor substrate and covering the reverse current preventing layer
Implementation Method 2
the drift region 102 near the second drain region 108 is depleted due to field effects. A voltage which is output to the TAP electrode 114 is therefore pinched off
Data Source
AI summary
An energy transmission device includes: a semiconductor device formed on a first semiconductor substrate; a semiconductor integrated circuit including a reverse current preventing diode and a control circuit; a DC voltage source; and a transformer. The reverse current preventing diode includes a reverse current preventing layer of a second conductivity type formed at a surface of a second semiconductor substrate, and a well layer of a first conductivity type formed in the second semiconductor substrate and covering the reverse current preventing layer. The transformer includes a primary winding connected in series with the semiconductor device and the DC voltage source, and a first secondary winding connected to a load. The energy transmission device is configured so that electric power is supplied from the first secondary winding of the transformer to the load. A second drain electrode of the semiconductor device is electrically connected to the reverse current preventing layer.