Semiconductor Device Latch-Up Suppression via Segmented Trenches
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Solution Overview
Problem
Semiconductor devices face challenges in maintaining latch-up withstand capability during switching operations without compromising electrical characteristics, particularly due to miniaturization processes that shorten the spacing between mesa portions.
Innovation Solution
The semiconductor device incorporates a contact region with a higher doping concentration than the base region, positioned below the emitter region and spaced apart from the gate trench portion, which enhances latch-up suppression by facilitating hole current extraction and preventing direct extraction through the emitter region, thereby stabilizing the device's operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the spacing between mesa portions is reduced during miniaturization, then device integration density is improved, but latch-up withstand capability deteriorates
Solution Approach 1:
The patent introduces a first trench portion adjacent to the gate trench portion, dividing the mesa structure into segmented regions. This segmentation creates isolated zones that prevent parasitic thyristor formation while maintaining compact spacing, thus improving latch-up withstand capability without sacrificing integration density
Solution Approach 2:
The patent applies different doping concentrations to specific regions: the contact region has higher doping concentration than the base region, and the emitter region has higher doping concentration than the drift region. This local quality variation optimizes carrier extraction in critical areas, enhancing latch-up suppression locally without affecting overall device performance
2Reliability
If the contact region is positioned below the emitter region, then latch-up suppression is improved, but device structure complexity increases
Solution Approach 1:
The patent merges the contact region with the base region structure, where the contact region is formed within the base region at a higher doping concentration. This merging approach achieves effective latch-up suppression through proper carrier extraction while avoiding the need for completely separate structural elements, thus limiting the increase in device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the semiconductor device's latch-up withstand capability without significantly affecting electrical characteristics, even during process pitch miniaturization, by ensuring stable channel formation and suppressing switching breakdowns.
Implementation Method 1
enhances latch-up suppression by facilitating hole current extraction and preventing direct extraction through the emitter region
Data Source
AI summary
Provided is a semiconductor device including a gate trench portion and a dummy trench portion adjacent to the gate trench portion. The semiconductor device may include: a drift region of a first conductivity type, provided in a semiconductor substrate; a base region of a second conductivity type, provided above the drift region; an emitter region of the first conductivity type, with a doping concentration higher than the drift region, provided above the base region; and a contact region of the second conductivity type, with a doping concentration higher than the base region, provided above the base region. The contact region may be provided below the lower end on the dummy trench portion side of the emitter region in the mesa portion between the gate trench portion and the dummy trench portion.