Semiconductor Structure Lateral Heat Dissipation
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Solution Overview
Problem
The increasing complexity of semiconductor manufacturing leads to challenges such as degraded electrical performance and high yield loss due to heat dissipation issues in compact, high-density multi-chip structures, where heat generated by stacked chips is trapped, exceeding operational temperatures.
Innovation Solution
A semiconductor structure incorporating a substrate, a block, multiple dies stacked vertically, a heat spreader with higher thermal conductivity than the thermal interface material (TIM), and the TIM between the heat spreader and die sidewalls, enhancing lateral and vertical heat dissipation by creating shorter heat dissipation routes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple dies are stacked vertically to increase interconnect density and functionality, then the semiconductor structure achieves greater compactness and functionality, but heat generated by stacked chips is trapped and exceeds operational temperatures
Solution Approach 1:
The patent introduces lateral heat dissipation pathways by positioning heat spreaders adjacent to die sidewalls and configuring thermal interface materials to conduct heat horizontally. This adds a lateral dimension to heat dissipation, complementing the traditional vertical pathway and enabling effective thermal management in compact stacked architectures.
Solution Approach 2:
The patent employs thermal interface materials as intermediary substances between die sidewalls and heat spreaders. These TIMs facilitate efficient thermal coupling and heat transfer across interfaces, enabling effective heat dissipation from the stacked dies through the lateral heat spreader pathways.
2Loss of energy
If thermal interface material is placed between heat spreader and die sidewalls to facilitate heat transfer, then heat dissipation efficiency improves, but manufacturing complexity increases
Solution Approach 1:
The patent configures thermal interface materials and heat spreaders to be positioned and coupled to die sidewalls before final assembly of the stacked structure. This preliminary positioning simplifies the overall manufacturing process by establishing thermal pathways early in the assembly sequence, reducing the complexity of subsequent steps.
3Loss of energy
If heat spreader with higher thermal conductivity than TIM is used to create shorter heat dissipation routes, then heat dissipation efficiency improves, but device complexity increases
Solution Approach 1:
The patent applies heat spreaders with high thermal conductivity specifically in regions adjacent to die sidewalls where lateral heat dissipation is needed. This localized application of high-performance thermal management components optimizes heat dissipation efficiency while minimizing overall device complexity by concentrating thermal management resources where most needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents overheating in stacked die structures, maintaining electrical performance and reducing manufacturing costs by improving heat dissipation efficiency.
Implementation Method 1
a thermal interface material (TIM) between the sidewall of the first die and the sidewall of the heat spreader
Implementation Method 2
A thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM
Data Source
AI summary
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a die stack disposed over the substrate, a heat spreader disposed over the substrate and having a surface facing the substrate, and a thermal interface material (TIM) disposed between the die stack and the heat spreader. A bottommost die of the die stack includes a surface exposed from remaining dies of the die stack from a top view perspective; and the TIM is in contact with the exposed surface of the bottommost die and the surface of the heat spreader, and is in contact with a sidewall of at least one of the plurality of dies of the die stack.