Semiconductor Circuit Layout With Lateral Heat-Conducting Enclosure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In power electronics, the heat dissipation of semiconductor components is inefficient due to the trade-off between the thickness of the metallic heat spreader layer, which affects thermal resistance and heat capacity, with thicker layers increasing overall height and series resistance, and thinner layers reducing effectiveness in transient heat dissipation.
Innovation Solution
A circuit arrangement with a heat-conducting element that laterally encloses the semiconductor component to at least 50% and has a specific thermal conductivity of at least 20 W/mK, providing improved transient heat dissipation by increasing the contact surface area and reducing thermal resistance, while maintaining a low series resistance to the heat sink.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the metallic layer is thickened for enhanced heat spreading and dissipation, then heat dissipation effectiveness is improved, but the overall height and thermal series resistance to the heat sink increase
Solution Approach 1:
The patent transitions from conventional bottom-only heat dissipation to multi-dimensional heat dissipation by adding lateral heat-conducting elements that contact the side surfaces of the semiconductor component. This dimensional expansion allows heat to escape through multiple pathways (bottom and sides) simultaneously, improving heat dissipation effectiveness without increasing the thickness of the metallic layer or overall height.
2Temperature
If the metallic layer is thickened for enhanced heat spreading and dissipation, then heat dissipation effectiveness is improved, but thermal series resistance to the heat sink increases
Solution Approach 1:
The heat dissipation function is segmented into multiple independent pathways: the conventional bottom pathway through the metallic layer and new lateral pathways through the heat-conducting elements contacting the side surfaces. This segmentation allows heat to be distributed across multiple parallel thermal circuits, reducing the overall thermal series resistance without requiring a thicker metallic layer.
3Length of stationary object
If the metallic layer is made thinner, then overall height and series resistance are reduced, but effectiveness as a heat spreader and heat capacity for transient heat input decreases
Solution Approach 1:
The patent merges the heat dissipation functions of the metallic layer and the heat-conducting elements into a coordinated multi-pathway system. The metallic layer continues to provide bottom heat dissipation while the newly added heat-conducting elements provide lateral heat dissipation, creating a combined system that maintains transient heat dissipation effectiveness even with a thinner metallic layer.
4Area of stationary object
If the side surfaces of semiconductor components are utilized for heat dissipation, then surface area for heat dissipation increases, but thermal contact between the heat-conducting element and semiconductor component must be ensured
Solution Approach 1:
The patent introduces a thermal interface material as an intermediary substance between the heat-conducting elements and the side surfaces of the semiconductor component. This intermediary ensures reliable thermal contact by filling microscopic gaps and providing conformal contact, thereby maximizing the effective heat dissipation surface area while maintaining high thermal coupling efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances heat dissipation by utilizing the previously underutilized side surfaces of semiconductor components, achieving a 20% area increase and rapid heat dissipation during peaks, thereby reducing thermal resistance and improving overall heat management without increasing series resistance.
Implementation Method 1
a heat-conducting element with a specific thermal conductivity of at least 20 W/mK, which laterally encloses the semiconductor component by at least 50% and is in mechanical contact with the side surfaces of the semiconductor component
Data Source
Figure 1
Figure 2~4
Figure 5
AI summary
A circuit arrangement with a semiconductor device is specified, which has at least one thermal conductivity element with a specific thermal conductivity of at least 20 W/mK, which surrounds the semiconductor device laterally to at least 50% and is in mechanical contact with the side surfaces of the semiconductor device and has at least half the height of the semiconductor device.