Semiconductor Substrate with Lateral Spacer Masks for Mixed Pattern Densities
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Solution Overview
Problem
Current methods for manufacturing substrates with integrated circuits face difficulties in simultaneously forming small and large size patterns with high density due to complex photolithography steps and technological constraints, making it challenging to produce substrates with diverse pattern densities.
Innovation Solution
A method involving a substrate with a semi-conductor material layer, a first protective mask, and a second etching mask that forms lateral spacers to define and separate areas, allowing for the etching of semi-conductor material to create patterns of varying sizes, including small dimensions for FinFET transistors and larger dimensions for planar transistors, using insulation patterns for electrical insulation and reduced parasite etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography methods are used to define patterns of small dimensions, then manufacturing precision is improved, but device complexity increases due to numerous photolithography steps
Solution Approach 1:
The substrate is divided into two distinct areas: a first area with thinned semi-conductor material for high-density small patterns, and a second area with thick semi-conductor material for larger patterns. This segmentation allows different photolithography approaches to be applied to each area, reducing overall process complexity while maintaining precision where needed.
Solution Approach 2:
Different structural characteristics are applied to different areas of the substrate. The first area has thinned material suitable for small-dimensional patterns with high density, while the second area has thick material suitable for larger patterns. This local differentiation enables optimized manufacturing for each region's specific requirements.
2Adaptability or versatility
If the substrate is etched to form three-dimensional transistor structures, then adaptability is improved for different transistor architectures, but manufacturing precision deteriorates due to difficulties in defining small-dimensional patterns with high density
Solution Approach 1:
The substrate is segmented into a first area optimized for three-dimensional transistor structures (with thinned material for high-density small patterns) and a second area for other transistor types. This allows simultaneous support for multiple transistor architectures while maintaining precision in the three-dimensional transistor region through specialized processing.
Solution Approach 2:
The substrate exhibits local quality differences: the first area has thinned semi-conductor material specifically optimized for three-dimensional transistor fabrication with high precision, while the second area retains thick material for other transistor architectures. This local optimization enables both versatility and precision.
3Manufacturing precision
If multiple photolithography steps are used to form areas of small and large dimensions, then manufacturing precision is improved, but productivity deteriorates due to the large number of processing steps
Solution Approach 1:
The substrate is divided into first and second areas with different semi-conductor material thicknesses, allowing different pattern sizes to be formed simultaneously in different regions. This segmentation enables a single photolithography step to produce both small and large patterns, eliminating the need for multiple sequential steps and improving productivity while maintaining precision.
Solution Approach 2:
The invention merges the formation of small and large patterns into a single photolithography step by creating areas with different material thicknesses that respond differently to the same exposure and development process. This combining of functions into one step significantly improves fabrication throughput while maintaining the precision needed for both pattern types.
4Adaptability or versatility
If the substrate structure is modified to accommodate diverse pattern densities, then adaptability is improved, but device complexity increases due to additional masks and processing steps
Solution Approach 1:
The substrate is segmented into first and second areas with different semi-conductor material thicknesses, enabling diverse pattern densities to be formed in each area. This structural segmentation provides adaptability for different pattern densities while avoiding the need for additional masks and processing steps, thereby reducing device complexity.
Solution Approach 2:
The substrate exhibits local quality variations with different material thicknesses in different areas, providing inherent adaptability for diverse pattern densities. This local structural differentiation achieves versatility without requiring additional processing complexity, as the different thicknesses naturally accommodate different pattern requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the fabrication process, enabling the formation of substrates with diverse pattern densities by reducing the number of photolithography steps and technological constraints, allowing for precise control of pattern sizes and improved integration density.
Implementation Method 1
a second etching mask 3 is formed so as to define the different active areas of the substrate... semi-conductor film 2 is etched so as to define active areas in the thin area and in the thick area
Data Source
AI summary
A substrate is successively provided with a support (7), an electrically insulating layer (8), and a semi-conductor material layer (2). A first protective mask (1) completely covers a second area (B) of the semi-conductor material layer and leaves a first area (A) of the semi-conductor material layer uncovered. A second etching mask (3) partially covers the first area (A) and at least partially covers the second area (B), so as to define and separate a first area and a second area. Lateral spacers are formed on the lateral surfaces of the second etching mask (3) so as to form a third etching mask. The semi-conductor material layer (2) is etched by means of the third etching mask so as to form a pattern made from semi-conductor material in the first area (A), the first etching mask (3) protecting the second area (B).